FQH18N50V2 Tech Spezifikatioune
onsemi - FQH18N50V2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQH18N50V2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 265mOhm @ 10A, 10V | |
Power Dissipation (Max) | 277W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
Basis Produktnummer | FQH1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQH18N50V2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQH18N50V2 | SQ2303ES-T1_GE3 | FQH90N15 | FDP4D5N10C |
Hiersteller | onsemi | Vishay Siliconix | onsemi | onsemi |
FET Feature | - | - | - | - |
Package / Case | TO-247-3 | TO-236-3, SC-59, SOT-23-3 | TO-247-3 | TO-220-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 2.5A (Tc) | 90A (Tc) | 128A (Tc) |
Vgs (Max) | ±30V | ±20V | ±25V | ±20V |
Serie | QFET® | Automotive, AEC-Q101, TrenchFET® | QFET® | PowerTrench® |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | 6.8 nC @ 10 V | 285 nC @ 10 V | 68 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V | 210 pF @ 25 V | 8700 pF @ 25 V | 5065 pF @ 50 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V |
Supplier Device Package | TO-247-3 | SOT-23-3 (TO-236) | TO-247-3 | TO-220-3 |
Entworf fir Source Voltage (Vdss) | 500 V | 30 V | 150 V | 100 V |
Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 265mOhm @ 10A, 10V | 170mOhm @ 1.8A, 10V | 18mOhm @ 45A, 10V | 4.5mOhm @ 100A, 10V |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tube |
Power Dissipation (Max) | 277W (Tc) | 1.9W (Tc) | 375W (Tc) | 2.4W (Ta), 150W (Tc) |
Basis Produktnummer | FQH1 | SQ2303 | FQH9 | FDP4D5 |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 2.5V @ 250µA | 4V @ 250µA | 4V @ 310µA |
Eroflueden FQH18N50V2 PDF DataDhusts an onsemi Dokumentatioun fir FQH18N50V2 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.