FQH18N50V2 Tech Spezifikatioune
Fairchild Semiconductor - FQH18N50V2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQH18N50V2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 265mOhm @ 10A, 10V | |
Power Dissipation (Max) | 277W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQH18N50V2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQH18N50V2 | FQH140N10 | FQH8N100C | NTA4153NT1 |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | onsemi |
Serie | QFET® | QFET® | QFET® | - |
Supplier Device Package | TO-247 | TO-247 | TO-247-3 | SC-75, SOT-416 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 140A (Tc) | 8A (Tc) | 915mA (Ta) |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | SC-75, SOT-416 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 1.5V, 4.5V |
Power Dissipation (Max) | 277W (Tc) | 375W (Tc) | 225W (Tc) | 300mW (Tj) |
Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 1.1V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 500 V | 100 V | 1000 V | 20 V |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | 285 nC @ 10 V | 70 nC @ 10 V | 1.82 nC @ 4.5 V |
Vgs (Max) | ±30V | ±25V | ±30V | ±6V |
Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V | 7900 pF @ 25 V | 3220 pF @ 25 V | 110 pF @ 16 V |
Rds On (Max) @ Id, Vgs | 265mOhm @ 10A, 10V | 10mOhm @ 70A, 10V | 1.45Ohm @ 4A, 10V | 230mOhm @ 600mA, 4.5V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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