FQH8N100C Tech Spezifikatioune
onsemi - FQH8N100C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQH8N100C
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 1.45Ohm @ 4A, 10V | |
Power Dissipation (Max) | 225W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 1000 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
Basis Produktnummer | FQH8N100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQH8N100C.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQH8N100C | APT47F60J | FDMA291P | IRFR3911TRPBF |
Hiersteller | onsemi | Microchip Technology | onsemi | Infineon Technologies |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 1.8V, 4.5V | 10V |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | QFET® | POWER MOS 8™ | PowerTrench® | HEXFET® |
Package / Case | TO-247-3 | SOT-227-4, miniBLOC | 6-WDFN Exposed Pad | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | 330 nC @ 10 V | 14 nC @ 4.5 V | 32 nC @ 10 V |
Basis Produktnummer | FQH8N100 | APT47F60 | FDMA291 | - |
Entworf fir Source Voltage (Vdss) | 1000 V | 600 V | 20 V | 100 V |
Mounting Type | Through Hole | Chassis Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 49A (Tc) | 6.6A (Ta) | 14A (Tc) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 2.5mA | 1V @ 250µA | 4V @ 250µA |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V | 13190 pF @ 25 V | 1000 pF @ 10 V | 740 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 1.45Ohm @ 4A, 10V | 90mOhm @ 33A, 10V | 42mOhm @ 6.6A, 4.5V | 115mOhm @ 8.4A, 10V |
Power Dissipation (Max) | 225W (Tc) | 540W (Tc) | 2.4W (Ta) | 56W (Tc) |
Supplier Device Package | TO-247-3 | ISOTOP® | 6-MicroFET (2x2) | D-Pak |
Vgs (Max) | ±30V | ±30V | ±8V | ±20V |
Eroflueden FQH8N100C PDF DataDhusts an onsemi Dokumentatioun fir FQH8N100C - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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