SQ2303ES-T1_GE3 Tech Spezifikatioune
Vishay Siliconix - SQ2303ES-T1_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQ2303ES-T1_GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | Automotive, AEC-Q101, TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.8A, 10V | |
| Power Dissipation (Max) | 1.9W (Tc) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Tc) | |
| Basis Produktnummer | SQ2303 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQ2303ES-T1_GE3.
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|---|---|---|---|---|
| Part Number | SQ2303ES-T1_GE3 | SQ2301ES-T1_GE3 | SQ2309ES-T1_GE3 | SQ2309ES-T1_BE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Supplier Device Package | SOT-23-3 (TO-236) | TO-236 (SOT-23) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 1.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Power Dissipation (Max) | 1.9W (Tc) | 3W (Tc) | 2W (Tc) | 2W (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.8A, 10V | 120mOhm @ 2.8A, 4.5V | 336mOhm @ 3.8A, 10V | 335mOhm @ 1.25A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 60 V | 60 V |
| Vgs (Max) | ±20V | ±8V | ±20V | ±20V |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Tc) | 3.9A (Tc) | 1.7A (Tc) | 1.7A (Tc) |
| Basis Produktnummer | SQ2303 | SQ2301 | SQ2309 | SQ2309 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V | 425 pF @ 10 V | 265 pF @ 25 V | 265 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | 8 nC @ 4.5 V | 8.5 nC @ 10 V | 8.5 nC @ 10 V |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TA) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Serie | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
Eroflueden SQ2303ES-T1_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQ2303ES-T1_GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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