3LP01M-TL-H Tech Spezifikatioune
onsemi - 3LP01M-TL-H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 3LP01M-TL-H
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | MCP | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 10.4Ohm @ 50mA, 4V | |
Power Dissipation (Max) | 150mW (Ta) | |
Package / Case | SC-70, SOT-323 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7.5 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 1.43 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100mA (Ta) | |
Basis Produktnummer | 3LP01 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 3LP01M-TL-H.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | 3LP01M-TL-H | IRLML5203 | 3LP01M-TL-E | FDP52N20 |
Hiersteller | onsemi | Infineon Technologies | onsemi | onsemi |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Rds On (Max) @ Id, Vgs | 10.4Ohm @ 50mA, 4V | 98mOhm @ 3A, 10V | 10.4Ohm @ 50mA, 4V | 49mOhm @ 26A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7.5 pF @ 10 V | 510 pF @ 25 V | 7.5 pF @ 10 V | 2900 pF @ 25 V |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4V | 4.5V, 10V | 1.5V, 4V | 10V |
Basis Produktnummer | 3LP01 | - | 3LP01 | FDP52 |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 200 V |
FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100mA (Ta) | 3A (Ta) | 100mA (Ta) | 52A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube |
Power Dissipation (Max) | 150mW (Ta) | 1.25W (Ta) | 150mW (Ta) | 357W (Tc) |
Vgs (th) (Max) @ Id | - | 2.5V @ 250µA | - | 5V @ 250µA |
Vgs (Max) | ±10V | ±20V | ±10V | ±30V |
Serie | - | HEXFET® | - | UniFET™ |
Operatioun Temperatur | 150°C (TJ) | - | 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | MCP | Micro3™/SOT-23 | MCP | TO-220-3 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 1.43 nC @ 10 V | 14 nC @ 10 V | 1.43 nC @ 10 V | 63 nC @ 10 V |
FET Feature | - | - | - | - |
Package / Case | SC-70, SOT-323 | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 | TO-220-3 |
Eroflueden 3LP01M-TL-H PDF DataDhusts an onsemi Dokumentatioun fir 3LP01M-TL-H - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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