FQH140N10 Tech Spezifikatioune
onsemi - FQH140N10 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQH140N10
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 70A, 10V | |
Power Dissipation (Max) | 375W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 140A (Tc) | |
Basis Produktnummer | FQH1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQH140N10.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQH140N10 | FQH140N10 | NTD60N02RG | BSC040N08NS5ATMA1 |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 10mOhm @ 70A, 10V | 10mOhm @ 70A, 10V | 10.5mOhm @ 20A, 10V | 4mOhm @ 50A, 10V |
Vgs (Max) | ±25V | ±25V | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V | 285 nC @ 10 V | 14 nC @ 4.5 V | 54 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V | 7900 pF @ 25 V | 1330 pF @ 20 V | 3900 pF @ 40 V |
Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
Power Dissipation (Max) | 375W (Tc) | 375W (Tc) | 1.25W (Ta), 58W (Tc) | 2.5W (Ta), 104W (Tc) |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 140A (Tc) | 140A (Tc) | 8.5A (Ta), 32A (Tc) | 100A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-247-3 | TO-247-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8-PowerTDFN |
Supplier Device Package | TO-247-3 | TO-247 | DPAK | PG-TDSON-8-7 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | 6V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 2V @ 250µA | 3.8V @ 67µA |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 25 V | 80 V |
Basis Produktnummer | FQH1 | - | NTD60 | BSC040 |
Serie | QFET® | QFET® | - | OptiMOS™ |
Eroflueden FQH140N10 PDF DataDhusts an onsemi Dokumentatioun fir FQH140N10 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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