FQH140N10 Tech Spezifikatioune
Fairchild Semiconductor - FQH140N10 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQH140N10
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 70A, 10V | |
Power Dissipation (Max) | 375W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 140A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQH140N10.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQH140N10 | FQH140N10 | FDME910PZT | IRFZ44VZSPBF |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Infineon Technologies |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 140A (Tc) | 140A (Tc) | 8A (Ta) | 57A (Tc) |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 375W (Tc) | 375W (Tc) | 2.1W (Ta) | 92W (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 1.5V @ 250µA | 4V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | QFET® | QFET® | PowerTrench® | HEXFET® |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 20 V | 60 V |
Package / Case | TO-247-3 | TO-247-3 | 6-PowerUFDFN | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V | 285 nC @ 10 V | 21 nC @ 4.5 V | 65 nC @ 10 V |
Supplier Device Package | TO-247 | TO-247-3 | MicroFet 1.6x1.6 Thin | D2PAK |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Package protegéieren | Tube | Tube | Bulk | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 1.8V, 4.5V | 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 10mOhm @ 70A, 10V | 10mOhm @ 70A, 10V | 24mOhm @ 8A, 4.5V | 12mOhm @ 34A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V | 7900 pF @ 25 V | 2110 pF @ 10 V | 1690 pF @ 25 V |
Vgs (Max) | ±25V | ±25V | ±8V | ±20V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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