IRF5802TR Tech Spezifikatioune
Infineon Technologies - IRF5802TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5802TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro6™(TSOP-6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 540mA, 10V | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Cut Tape (CT) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 900mA (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5802TR.
| Produktiounsattriff |  |
|
|
 |
|---|---|---|---|---|
| Part Number | IRF5802TR | IRF5802TRPBF | IRF5801TRPBF | IRF543 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Harris Corporation |
| Serie | - | HEXFET® | HEXFET® | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
| Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 540mA, 10V | 1.2Ohm @ 540mA, 10V | 2.2Ohm @ 360mA, 10V | 100mOhm @ 17A, 10V |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | 5.5V @ 250µA | 5.5V @ 250µA | 4V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 150 V | 150 V | 200 V | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V | 88 pF @ 25 V | 88 pF @ 25 V | 1450 pF @ 25 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 900mA (Ta) | 900mA (Ta) | 600mA (Ta) | 25A (Tc) |
| FET Feature | - | - | - | - |
| Supplier Device Package | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) | TO-220AB |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | 6.8 nC @ 10 V | 3.9 nC @ 10 V | 59 nC @ 10 V |
Eroflueden IRF5802TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5802TR - Infineon Technologies.
IRF5802TRPBFInfineon TechnologiesMOSFET N-CH 150V 900MA MICRO6IRF5803D2TRPBF.IRIRF5801TRPBFInfineon TechnologiesMOSFET N-CH 200V 600MA MICRO6IRF543Harris CorporationN-CHANNEL POWER MOSFETIRF5802Infineon TechnologiesMOSFET N-CH 150V 900MA MICRO6
IRF5620PBFCypress Semiconductor (Infineon Technologies)IRF5800TRInfineon TechnologiesMOSFET P-CH 30V 4A MICRO6IRF5802D2TRPBFIR
IRF5803D2TRInfineon TechnologiesMOSFET P-CH 40V 3.4A 8SOIRF5800TRPBFInfineon TechnologiesMOSFET P-CH 30V 4A MICRO6IRF5803TRInfineon TechnologiesMOSFET P-CH 40V 3.4A MICRO6IRF5803GTRPBFVBSEMIIRF542Harris CorporationN-CHANNEL POWER MOSFETIRF5801TRPBF MOSIRIRF5803D2PBFInfineon TechnologiesMOSFET P-CH 40V 3.4A 8SOIRF5803D2TRPBFInfineon TechnologiesMOSFET P-CH 40V 3.4A 8SOIRF5803D2Infineon TechnologiesMOSFET P-CH 40V 3.4A 8SOIRF5802TRPBF MOSIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.