IRF5803TR Tech Spezifikatioune
Infineon Technologies - IRF5803TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5803TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | Micro6™(TSOP-6) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V | |
Power Dissipation (Max) | 2W (Ta) | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.4A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5803TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF5803TR | IRF5804TRPBF | IRF5805TRPBF | IRF5803D2TR |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | Infineon Technologies |
FET Feature | - | - | - | Schottky Diode (Isolated) |
Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | 2W (Ta) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V | 198mOhm @ 2.5A, 10V | 98mOhm @ 3.8A, 10V | 112mOhm @ 3.4A, 10V |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | 8-SOIC (0.154", 3.90mm Width) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | 680 pF @ 25 V | 511 pF @ 25 V | 1110 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 30 V | 40 V |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.4A (Ta) | 2.5A (Ta) | 3.8A (Ta) | 3.4A (Ta) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 2.5V @ 250µA | 3V @ 250µA |
Serie | HEXFET® | HEXFET® | HEXFET® | FETKY™ |
Supplier Device Package | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) | 8-SO |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 8.5 nC @ 10 V | 17 nC @ 10 V | 37 nC @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Eroflueden IRF5803TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5803TR - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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