IRF5800TR Tech Spezifikatioune
Infineon Technologies - IRF5800TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5800TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | Micro6™(TSOP-6) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 10V | |
Power Dissipation (Max) | 2W (Ta) | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5800TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF5800TR | IRF5801TRPBF | IRF5802TRPBF | IRF540ZPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 10V | 2.2Ohm @ 360mA, 10V | 1.2Ohm @ 540mA, 10V | 26.5mOhm @ 22A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V | 88 pF @ 25 V | 88 pF @ 25 V | 1770 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | 2W (Ta) | 92W (Tc) |
Vgs (Max) | ±20V | ±30V | ±30V | ±20V |
Supplier Device Package | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) | TO-220AB |
Entworf fir Source Voltage (Vdss) | 30 V | 200 V | 150 V | 100 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 3.9 nC @ 10 V | 6.8 nC @ 10 V | 63 nC @ 10 V |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 1V @ 250µA | 5.5V @ 250µA | 5.5V @ 250µA | 4V @ 250µA |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | TO-220-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | 600mA (Ta) | 900mA (Ta) | 36A (Tc) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Eroflueden IRF5800TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5800TR - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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