IRF542 Tech Spezifikatioune
Harris Corporation - IRF542 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - IRF542
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 17A, 10V | |
| Power Dissipation (Max) | 150W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation IRF542.
| Produktiounsattriff | |
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 |
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|---|---|---|---|---|
| Part Number | IRF542 | IRF540ZS | IRF5802 | IRF540Z |
| Hiersteller | Harris Corporation | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SOT-23-6 Thin, TSOT-23-6 | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V | 1770 pF @ 25 V | 88 pF @ 25 V | 1770 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | 63 nC @ 10 V | 6.8 nC @ 10 V | 63 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Serie | - | HEXFET® | HEXFET® | HEXFET® |
| Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 150 V | 100 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 17A, 10V | 26.5mOhm @ 22A, 10V | 1.2Ohm @ 540mA, 10V | 26.5mOhm @ 22A, 10V |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5.5V @ 250µA | 4V @ 250µA |
| Power Dissipation (Max) | 150W (Tc) | 92W (Tc) | 2W (Ta) | 92W (Tc) |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | 36A (Tc) | 900mA (Ta) | 36A (Tc) |
| Supplier Device Package | TO-220AB | D2PAK | Micro6™(TSOP-6) | TO-220AB |
IRF540ZSInfineon TechnologiesMOSFET N-CH 100V 36A D2PAKIRF5802Infineon TechnologiesMOSFET N-CH 150V 900MA MICRO6IRF540ZInfineon TechnologiesMOSFET N-CH 100V 36A TO220ABIRF541Harris CorporationN-CHANNEL POWER MOSFETIRF543Harris CorporationN-CHANNEL POWER MOSFETIRF5801TRPBF MOSIRIRF540ZPBF MOSIRIRF540ZSPBF MOSIR
IRF540STRLPBFVishay SiliconixMOSFET N-CH 100V 28A D2PAKIRF5800TRInfineon TechnologiesMOSFET P-CH 30V 4A MICRO6IRF5800TRPBFInfineon TechnologiesMOSFET P-CH 30V 4A MICRO6IRF540ZPBFInfineon TechnologiesMOSFET N-CH 100V 36A TO220ABIRF5801TRPBFInfineon TechnologiesMOSFET N-CH 200V 600MA MICRO6IRF5802TRInfineon TechnologiesMOSFET N-CH 150V 0.9A 6-TSOPIRF540ZSTRLPBFInfineon TechnologiesMOSFET N-CH 100V 36A D2PAKIRF5802D2TRPBFIRIRF540STRRPBFVishay SiliconixMOSFET N-CH 100V 28A D2PAK
IRF5620PBFCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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