IRF5803D2 Tech Spezifikatioune
Infineon Technologies - IRF5803D2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5803D2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | FETKY™ | |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | Schottky Diode (Isolated) | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.4A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5803D2.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF5803D2 | IRF5802 | IRF5802TR | IRF5800TR |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | - | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tube | Tube | Cut Tape (CT) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V | 1.2Ohm @ 540mA, 10V | 1.2Ohm @ 540mA, 10V | 85mOhm @ 4A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.4A (Ta) | 900mA (Ta) | 900mA (Ta) | 4A (Ta) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
| Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | - | 2W (Ta) |
| Serie | FETKY™ | HEXFET® | - | HEXFET® |
| FET Feature | Schottky Diode (Isolated) | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | - | 4.5V, 10V |
| Vgs (Max) | ±20V | ±30V | - | ±20V |
| Supplier Device Package | 8-SO | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 6.8 nC @ 10 V | 6.8 nC @ 10 V | 17 nC @ 10 V |
| Entworf fir Source Voltage (Vdss) | 40 V | 150 V | 150 V | 30 V |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 5.5V @ 250µA | 5.5V @ 250µA | 1V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | 88 pF @ 25 V | 88 pF @ 25 V | 535 pF @ 25 V |
Eroflueden IRF5803D2 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5803D2 - Infineon Technologies.
IRF5801TRPBF MOSIRIRF5802TRPBF MOSIRIRF5803D2TRPBF.IRIRF5803TRPBF MOSIRIRF5802Infineon TechnologiesMOSFET N-CH 150V 900MA MICRO6IRF5802TRInfineon TechnologiesMOSFET N-CH 150V 0.9A 6-TSOP
IRF5803TRPBCypress Semiconductor (Infineon Technologies)IRF5800TRInfineon TechnologiesMOSFET P-CH 30V 4A MICRO6IRF5803D2TRInfineon TechnologiesMOSFET P-CH 40V 3.4A 8SOIRF5802D2TRPBFIRIRF5803D2TRPBFInfineon TechnologiesMOSFET P-CH 40V 3.4A 8SOIRF5803D2PBFInfineon TechnologiesMOSFET P-CH 40V 3.4A 8SOIRF5803TRPBFInfineon TechnologiesMOSFET P-CH 40V 3.4A MICRO6IRF5800TRPBFInfineon TechnologiesMOSFET P-CH 30V 4A MICRO6IRF5801TRPBFInfineon TechnologiesMOSFET N-CH 200V 600MA MICRO6IRF5803TRInfineon TechnologiesMOSFET P-CH 40V 3.4A MICRO6IRF5803GTRPBFVBSEMIIRF5802TRPBFInfineon TechnologiesMOSFET N-CH 150V 900MA MICRO6| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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