IRF7759L2TRPBF Tech Spezifikatioune
International Rectifier - IRF7759L2TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRF7759L2TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DirectFET™ Isometric L8 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 96A, 10V | |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) | |
| Package / Case | DirectFET™ Isometric L8 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 12222 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 75 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 26A (Ta), 375A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRF7759L2TRPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7759L2TRPBF | IRF7780MTRPBF | IRF7805ATRPBF | IRF7769L1TRPBF |
| Hiersteller | International Rectifier | International Rectifier | Infineon Technologies | Infineon Technologies |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 3.7V @ 150µA | 3V @ 250µA | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 | DirectFET™ Isometric ME | 8-SO | DirectFET™ Isometric L8 |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V | 186 nC @ 10 V | 31 nC @ 5 V | 300 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 6V, 10V | 4.5V | 10V |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) | 96W (Tc) | 2.5W (Ta) | 3.3W (Ta), 125W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 12222 pF @ 25 V | 6504 pF @ 25 V | - | 11560 pF @ 25 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 75 V | 75 V | 30 V | 100 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 26A (Ta), 375A (Tc) | 89A (Tc) | 13A (Ta) | 20A (Ta), 124A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 | DirectFET™ Isometric ME | 8-SOIC (0.154", 3.90mm Width) | DirectFET™ Isometric L8 |
| Vgs (Max) | ±20V | ±20V | ±12V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 96A, 10V | 5.7mOhm @ 53A, 10V | 11mOhm @ 7A, 4.5V | 3.5mOhm @ 74A, 10V |
| Serie | HEXFET® | StrongIRFET™ | HEXFET® | - |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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