IRF7780MTRPBF Tech Spezifikatioune
International Rectifier - IRF7780MTRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRF7780MTRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.7V @ 150µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DirectFET™ Isometric ME | |
Serie | StrongIRFET™ | |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 53A, 10V | |
Power Dissipation (Max) | 96W (Tc) | |
Package / Case | DirectFET™ Isometric ME | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6504 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 89A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRF7780MTRPBF.
Produktiounsattriff | ||||
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Part Number | IRF7780MTRPBF | IRF7805ATR | IRF7759L2TR1PBF | IRF7799L2TRPBF |
Hiersteller | International Rectifier | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Supplier Device Package | DirectFET™ Isometric ME | 8-SO | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 6504 pF @ 25 V | - | 12222 pF @ 25 V | 6714 pF @ 25 V |
Package / Case | DirectFET™ Isometric ME | 8-SOIC (0.154", 3.90mm Width) | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | StrongIRFET™ | HEXFET® | HEXFET® | HEXFET® |
Vgs (Max) | ±20V | ±12V | ±20V | ±30V |
Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V | 31 nC @ 5 V | 300 nC @ 10 V | 165 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 96W (Tc) | 2.5W (Ta) | 3.3W (Ta), 125W (Tc) | 4.3W (Ta), 125W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 4.5V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 75 V | 30 V | 75 V | 250 V |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 53A, 10V | 11mOhm @ 7A, 4.5V | 2.3mOhm @ 96A, 10V | 38mOhm @ 21A, 10V |
Vgs (th) (Max) @ Id | 3.7V @ 150µA | 3V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 89A (Tc) | 13A (Ta) | 26A (Ta), 375A (Tc) | 35A (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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