IRF7779L2TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7779L2TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7779L2TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DirectFET™ Isometric L8 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V | |
Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) | |
Package / Case | DirectFET™ Isometric L8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 67A (Tc) | |
Basis Produktnummer | IRF7779 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7779L2TRPBF.
Produktiounsattriff | ||||
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Part Number | IRF7779L2TRPBF | IRF7759L2TRPBF | IRF7769L1TRPBF | IRF7799L2TRPBF |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | IRF7779 | - | IRF7769 | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Supplier Device Package | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 67A (Tc) | 26A (Ta), 375A (Tc) | 20A (Ta), 124A (Tc) | 35A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V | 12222 pF @ 25 V | 11560 pF @ 25 V | 6714 pF @ 25 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 150 V | 75 V | 100 V | 250 V |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | 300 nC @ 10 V | 300 nC @ 10 V | 165 nC @ 10 V |
Package / Case | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V | 2.3mOhm @ 96A, 10V | 3.5mOhm @ 74A, 10V | 38mOhm @ 21A, 10V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) | 3.3W (Ta), 125W (Tc) | 3.3W (Ta), 125W (Tc) | 4.3W (Ta), 125W (Tc) |
Eroflueden IRF7779L2TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7779L2TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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