IRF7799L2TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7799L2TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7799L2TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DirectFET™ Isometric L8 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 38mOhm @ 21A, 10V | |
Power Dissipation (Max) | 4.3W (Ta), 125W (Tc) | |
Package / Case | DirectFET™ Isometric L8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6714 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7799L2TRPBF.
Produktiounsattriff | ||||
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Part Number | IRF7799L2TRPBF | IRF7805QTRPBF | IRF7759L2TR1PBF | IRF7805APBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 4.5V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | DirectFET™ Isometric L8 | 8-SO | DirectFET™ Isometric L8 | 8-SO |
Entworf fir Source Voltage (Vdss) | 250 V | 30 V | 75 V | 30 V |
Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Tube |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | HEXFET® | - | HEXFET® | HEXFET® |
Input Capacitance (Ciss) (Max) @ Vds | 6714 pF @ 25 V | - | 12222 pF @ 25 V | - |
Vgs (Max) | ±30V | - | ±20V | ±12V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | DirectFET™ Isometric L8 | 8-SOIC (0.154", 3.90mm Width) | DirectFET™ Isometric L8 | 8-SOIC (0.154", 3.90mm Width) |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 4.3W (Ta), 125W (Tc) | - | 3.3W (Ta), 125W (Tc) | 2.5W (Ta) |
Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V | 31 nC @ 5 V | 300 nC @ 10 V | 31 nC @ 5 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) | 13A (Ta) | 26A (Ta), 375A (Tc) | 13A (Ta) |
Rds On (Max) @ Id, Vgs | 38mOhm @ 21A, 10V | 11mOhm @ 7A, 4.5V | 2.3mOhm @ 96A, 10V | 11mOhm @ 7A, 4.5V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 3V @ 250µA | 4V @ 250µA | 3V @ 250µA |
Eroflueden IRF7799L2TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7799L2TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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