IRF7756 Tech Spezifikatioune
Infineon Technologies - IRF7756 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7756
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 900mV @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-TSSOP | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.3A, 4.5V | |
| Power - Max | 1W | |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 12V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.3A | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | IRF775 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7756.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7756 | IRF7752 | IRF7751GTRPBF | IRF7750TR |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Power - Max | 1W | 1W | 1W | 1W |
| Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 900mV @ 250µA | 2V @ 250µA | 2.5V @ 250µA | 1.2V @ 250µA |
| Basis Produktnummer | IRF775 | IRF775 | IRF775 | IRF7750 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSSOP | 8-TSSOP | 8-TSSOP | 8-TSSOP |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.3A, 4.5V | 30mOhm @ 4.6A, 10V | 35mOhm @ 4.5A, 10V | 30mOhm @ 4.7A, 4.5V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.3A | 4.6A | 4.5A | 4.7A |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Konfiguratioun | 2 P-Channel (Dual) | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V | 861pF @ 25V | 1464pF @ 25V | 1700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V | 9nC @ 4.5V | 44nC @ 10V | 39nC @ 5V |
| Entworf fir Source Voltage (Vdss) | 12V | 30V | 30V | 20V |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) |
Eroflueden IRF7756 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7756 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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