IRL640SPBF Tech Spezifikatioune
Vishay Siliconix - IRL640SPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRL640SPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 5V | |
Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
Basis Produktnummer | IRL640 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRL640SPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRL640SPBF | IRL640A | IRL7472L1TRPBF | IRL640S |
Hiersteller | Vishay Siliconix | onsemi | Infineon Technologies | Vishay Siliconix |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | 5V | 4.5V, 10V | 4V, 5V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 18A (Tc) | 375A (Tc) | 17A (Tc) |
Serie | - | - | StrongIRFET™ | - |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V | 56 nC @ 5 V | 330 nC @ 4.5 V | 66 nC @ 5 V |
Basis Produktnummer | IRL640 | IRL640 | IRL7472 | IRL640 |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | 1705 pF @ 25 V | 20082 pF @ 25 V | 1800 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 40 V | 200 V |
Vgs (Max) | ±10V | ±20V | ±20V | ±10V |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tube |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2.5V @ 250µA | 2V @ 250µA |
Supplier Device Package | D²PAK (TO-263) | TO-220-3 | DirectFET™ Isometric L8 | D²PAK (TO-263) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | DirectFET™ Isometric L8 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) | 110W (Tc) | 3.8W (Ta), 341W (Tc) | 3.1W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 5V | 180mOhm @ 9A, 5V | 0.59mOhm @ 195A, 10V | 180mOhm @ 10A, 5V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden IRL640SPBF PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRL640SPBF - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.