IRL640A Tech Spezifikatioune
onsemi - IRL640A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - IRL640A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 5V | |
| Power Dissipation (Max) | 110W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1705 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | |
| Basis Produktnummer | IRL640 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi IRL640A.
| Produktiounsattriff |  |
 |
|
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|---|---|---|---|---|
| Part Number | IRL640A | IRL640SPBF | IRL640 | IRL630STRRPBF |
| Hiersteller | onsemi | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 5V | 180mOhm @ 10A, 5V | 180mOhm @ 10A, 5V | 400mOhm @ 5.4A, 5V |
| Supplier Device Package | TO-220-3 | D²PAK (TO-263) | TO-220AB | D²PAK (TO-263) |
| Basis Produktnummer | IRL640 | IRL640 | IRL640 | IRL630 |
| Power Dissipation (Max) | 110W (Tc) | 3.1W (Ta), 125W (Tc) | 125W (Tc) | 3.1W (Ta), 74W (Tc) |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | 4V, 5V | 4V, 5V | 4V, 5V |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs (Max) | ±20V | ±10V | ±10V | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1705 pF @ 25 V | 1800 pF @ 25 V | 1800 pF @ 25 V | 1100 pF @ 25 V |
| Serie | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V |
| Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 17A (Tc) | 17A (Tc) | 9A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V | 66 nC @ 5 V | 66 nC @ 5 V | 40 nC @ 10 V |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
Eroflueden IRL640A PDF DataDhusts an onsemi Dokumentatioun fir IRL640A - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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