IRL7833LPBF Tech Spezifikatioune
Infineon Technologies - IRL7833LPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL7833LPBF
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-262 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 38A, 10V | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4170 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRL7833LPBF.
Produktiounsattriff | ||||
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Part Number | IRL7833LPBF | IRL7833S | IRL7472L1TRPBF | IRL80HS120 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 40 V | 80 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DirectFET™ Isometric L8 | 6-PowerVDFN |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 38A, 10V | 3.8mOhm @ 38A, 10V | 0.59mOhm @ 195A, 10V | 32mOhm @ 7.5A, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Power Dissipation (Max) | 140W (Tc) | 140W (Tc) | 3.8W (Ta), 341W (Tc) | 11.5W (Tc) |
Vgs (th) (Max) @ Id | 2.3V @ 250µA | 2.3V @ 250µA | 2.5V @ 250µA | 2V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V | 47 nC @ 4.5 V | 330 nC @ 4.5 V | 7 nC @ 4.5 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Serie | HEXFET® | HEXFET® | StrongIRFET™ | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150A (Tc) | 150A (Tc) | 375A (Tc) | 12.5A (Tc) |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 4170 pF @ 15 V | 4170 pF @ 15 V | 20082 pF @ 25 V | 540 pF @ 25 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Supplier Device Package | TO-262 | D2PAK | DirectFET™ Isometric L8 | 6-PQFN (2x2) (DFN2020) |
Eroflueden IRL7833LPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL7833LPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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