IRL7486MTRPBF Tech Spezifikatioune
Infineon Technologies - IRL7486MTRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL7486MTRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.5V @ 150µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DirectFET™ Isometric ME | |
Serie | HEXFET®, StrongIRFET™ | |
Rds On (Max) @ Id, Vgs | 1.25mOhm @ 123A, 10V | |
Power Dissipation (Max) | 104W (Tc) | |
Package / Case | DirectFET™ Isometric ME | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6904 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 209A (Tc) | |
Basis Produktnummer | IRL7486 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRL7486MTRPBF | IRL7833PBF | IRL640S | IRL640STRRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Vishay Siliconix | Vishay Siliconix |
Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 4.5 V | 47 nC @ 4.5 V | 66 nC @ 5 V | 66 nC @ 5 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | DirectFET™ Isometric ME | TO-220AB | D²PAK (TO-263) | D²PAK (TO-263) |
Vgs (th) (Max) @ Id | 2.5V @ 150µA | 2.3V @ 250µA | 2V @ 250µA | 2V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 6904 pF @ 25 V | 4170 pF @ 15 V | 1800 pF @ 25 V | 1800 pF @ 25 V |
Power Dissipation (Max) | 104W (Tc) | 140W (Tc) | 3.1W (Ta), 125W (Tc) | 3.1W (Ta), 125W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4V, 5V | 4V, 5V |
Rds On (Max) @ Id, Vgs | 1.25mOhm @ 123A, 10V | 3.8mOhm @ 38A, 10V | 180mOhm @ 10A, 5V | 180mOhm @ 10A, 5V |
Vgs (Max) | ±20V | ±20V | ±10V | ±10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 209A (Tc) | 150A (Tc) | 17A (Tc) | 17A (Tc) |
Basis Produktnummer | IRL7486 | IRL7833 | IRL640 | IRL640 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 40 V | 30 V | 200 V | 200 V |
Serie | HEXFET®, StrongIRFET™ | HEXFET® | - | - |
Package / Case | DirectFET™ Isometric ME | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Eroflueden IRL7486MTRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL7486MTRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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