1N1201RB Tech Spezifikatioune
Solid State Inc. - 1N1201RB technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N1201RB
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 30 A | |
| Voltage - DC Reverse (Vr) (Max) | 150 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-4 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AA, DO-4, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 150 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N1201RB.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N1201RB | 1N1202A | 1N1202AR | 1N1201C |
| Hiersteller | Solid State Inc. | GeneSiC Semiconductor | Microchip Technology | Microchip Technology |
| Serie | - | - | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 30 A | 1.1 V @ 12 A | 1.35 V @ 38 A | 1.1 V @ 30 A |
| Mounting Type | Stud Mount | Chassis, Stud Mount | Stud Mount | Stud Mount |
| Supplier Device Package | DO-4 | DO-4 | DO-203AA (DO-4) | DO-4 (DO-203AA) |
| Package protegéieren | Box | Bulk | Bulk | Bulk |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 150°C | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 200 V | 200 V | 150 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 150 V | 10 µA @ 50 V | 5 µA @ 200 V | 10 µA @ 150 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 12A | 12A | 25A |
| Capacitance @ Vr, F. | - | - | - | - |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Technologie | Standard, Reverse Polarity | Standard | Standard, Reverse Polarity | Standard |
Eroflueden 1N1201RB PDF DataDhusts an Solid State Inc. Dokumentatioun fir 1N1201RB - Solid State Inc..
1N1202AGeneSiC SemiconductorDIODE GEN PURP 200V 12A DO41N1202ARMicrochip TechnologySTANDARD RECTIFIER1N1201CMicrochip TechnologySTANDARD RECTIFIER1N1201ASolid State Inc.DIODE GEN PURP 150V 12A DO41N1201RMicrochip TechnologySTANDARD RECTIFIER1N1202BRMicrochip TechnologySTANDARD RECTIFIER1N1202AMicrochip TechnologyDIODE GEN PURP 200V 12A DO203AA1N1202ARGeneSiC SemiconductorDIODE GEN PURP REV 200V 12A DO51N1202BSolid State Inc.DIODE GEN PURP 200V 12A DO41N1201RSolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1201BSolid State Inc.DIODE GEN PURP 150V 12A DO41N1201RASolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1201ARMicrochip TechnologySTANDARD RECTIFIER1N1201BRMicrochip TechnologySTANDARD RECTIFIER1N1201BMicrochip TechnologySTANDARD RECTIFIER1N1202Microchip TechnologySTANDARD RECTIFIER1N1202BMicrochip TechnologySTANDARD RECTIFIER1N1202Solid State Inc.DIODE GEN PURP 200V 12A DO4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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