1N1202B Tech Spezifikatioune
Solid State Inc. - 1N1202B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N1202B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 30 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-4 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AA, DO-4, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N1202B.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N1202B | 1N1201R | 1N1202 | 1N1202B |
| Hiersteller | Solid State Inc. | Solid State Inc. | Microchip Technology | Microchip Technology |
| Technologie | Standard | Standard, Reverse Polarity | Standard | Standard |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 12A | 12A | 12A |
| Capacitance @ Vr, F. | - | - | - | - |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Serie | - | - | - | - |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 150 V | 10 µA @ 200 V | 10 µA @ 200 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 30 A | 1.2 V @ 30 A | 1.2 V @ 30 A | 1.2 V @ 30 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 150 V | 200 V | 200 V |
| Package protegéieren | Box | Box | Bulk | Bulk |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Supplier Device Package | DO-4 | DO-4 | DO-4 (DO-203AA) | DO-4 (DO-203AA) |
Eroflueden 1N1202B PDF DataDhusts an Solid State Inc. Dokumentatioun fir 1N1202B - Solid State Inc..
1N1201RSolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1202Microchip TechnologySTANDARD RECTIFIER1N1202BMicrochip TechnologySTANDARD RECTIFIER1N1202RASolid State Inc.DIODE GEN PURP REV 200V 12A DO41N1203Microchip TechnologySTANDARD RECTIFIER1N1203Solid State Inc.DIODE GEN PURP 300V 12A DO41N1202ARMicrochip TechnologySTANDARD RECTIFIER1N1202RMicrochip TechnologySTANDARD RECTIFIER1N1201RBSolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1202RSolid State Inc.DIODE GEN PURP REV 200V 12A DO41N1201RASolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1202Solid State Inc.DIODE GEN PURP 200V 12A DO4
1N1202AGeneSiC SemiconductorDIODE GEN PURP 200V 12A DO41N1202ARGeneSiC SemiconductorDIODE GEN PURP REV 200V 12A DO51N1202BRMicrochip TechnologySTANDARD RECTIFIER1N1202AMicrochip TechnologyDIODE GEN PURP 200V 12A DO203AA1N1202CMicrochip TechnologySTANDARD RECTIFIER1N1202RBSolid State Inc.DIODE GEN PURP REV 200V 12A DO4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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