1N1201B Tech Spezifikatioune
Solid State Inc. - 1N1201B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N1201B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 30 A | |
| Voltage - DC Reverse (Vr) (Max) | 150 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-4 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AA, DO-4, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 150 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N1201B.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N1201B | 1N1201AR | 1N1202A | 1N1201RA |
| Hiersteller | Solid State Inc. | Microchip Technology | GeneSiC Semiconductor | Solid State Inc. |
| Capacitance @ Vr, F. | - | - | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 30 A | 1.2 V @ 30 A | 1.1 V @ 12 A | 1.2 V @ 30 A |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Supplier Device Package | DO-4 | DO-4 (DO-203AA) | DO-4 | DO-4 |
| Serie | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 150 V | 10 µA @ 150 V | 10 µA @ 50 V | 10 µA @ 150 V |
| Package protegéieren | Box | Bulk | Bulk | Box |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Technologie | Standard | Standard, Reverse Polarity | Standard | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 150 V | 200 V | 150 V |
| Mounting Type | Stud Mount | Stud Mount | Chassis, Stud Mount | Stud Mount |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 12A | 12A | 12A |
Eroflueden 1N1201B PDF DataDhusts an Solid State Inc. Dokumentatioun fir 1N1201B - Solid State Inc..
1N1201ARMicrochip TechnologySTANDARD RECTIFIER1N1202AGeneSiC SemiconductorDIODE GEN PURP 200V 12A DO41N1201RASolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1200RASolid State Inc.DIODE GEN PURP REV 100V 12A DO41N1201BMicrochip TechnologySTANDARD RECTIFIER1N1201RBSolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1202Solid State Inc.DIODE GEN PURP 200V 12A DO41N1200RSolid State Inc.DIODE GEN PURP REV 100V 12A DO41N1201Solid State Inc.DIODE GEN PURP 150V 12A DO41N1201RSolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1201Microchip TechnologySTANDARD RECTIFIER1N1201ASolid State Inc.DIODE GEN PURP 150V 12A DO41N1201BRMicrochip TechnologySTANDARD RECTIFIER1N1200RBSolid State Inc.DIODE GEN PURP REV 100V 12A DO41N1201AMicrochip TechnologyDIODE GEN PURP 150V 12A DO203AA1N1202Microchip TechnologySTANDARD RECTIFIER1N1201CMicrochip TechnologySTANDARD RECTIFIER1N1201RMicrochip TechnologySTANDARD RECTIFIER| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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