1N1202AR Tech Spezifikatioune
GeneSiC Semiconductor - 1N1202AR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - 1N1202AR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AB, DO-5, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Chassis, Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N1202AR |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor 1N1202AR.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N1202AR | 1N1202R | 1N1201R | 1N1202 |
| Hiersteller | GeneSiC Semiconductor | Solid State Inc. | Microchip Technology | Solid State Inc. |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 12A | 12A | 12A |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Basis Produktnummer | 1N1202AR | - | 1N1201 | - |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 150 V | 200 V |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | 10 µA @ 200 V | 10 µA @ 150 V | 10 µA @ 200 V |
| Capacitance @ Vr, F. | - | - | - | - |
| Mounting Type | Chassis, Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Serie | - | - | - | - |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Supplier Device Package | DO-5 | DO-4 | DO-4 (DO-203AA) | DO-4 |
| Technologie | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard |
| Package protegéieren | Bulk | Box | Bulk | Box |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12 A | 1.2 V @ 30 A | 1.2 V @ 30 A | 1.2 V @ 30 A |
Eroflueden 1N1202AR PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir 1N1202AR - GeneSiC Semiconductor.
1N1202RSolid State Inc.DIODE GEN PURP REV 200V 12A DO41N1201RMicrochip TechnologySTANDARD RECTIFIER1N1202Solid State Inc.DIODE GEN PURP 200V 12A DO41N1202BRMicrochip TechnologySTANDARD RECTIFIER1N1202CMicrochip TechnologySTANDARD RECTIFIER1N1202BSolid State Inc.DIODE GEN PURP 200V 12A DO41N1202RBSolid State Inc.DIODE GEN PURP REV 200V 12A DO41N1202RMicrochip TechnologySTANDARD RECTIFIER1N1202Microchip TechnologySTANDARD RECTIFIER
1N1202AGeneSiC SemiconductorDIODE GEN PURP 200V 12A DO41N1201RASolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1203Solid State Inc.DIODE GEN PURP 300V 12A DO41N1202ARMicrochip TechnologySTANDARD RECTIFIER1N1202RASolid State Inc.DIODE GEN PURP REV 200V 12A DO41N1202BMicrochip TechnologySTANDARD RECTIFIER1N1202AMicrochip TechnologyDIODE GEN PURP 200V 12A DO203AA1N1201RBSolid State Inc.DIODE GEN PURP REV 150V 12A DO41N1201RSolid State Inc.DIODE GEN PURP REV 150V 12A DO4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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