RSR025P03HZGTL Tech Spezifikatioune
Rohm Semiconductor - RSR025P03HZGTL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSR025P03HZGTL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TSMT3 | |
| Serie | Automotive, AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 2.5A, 10V | |
| Power Dissipation (Max) | 700mW (Ta) | |
| Package / Case | SC-96 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | |
| Basis Produktnummer | RSR025 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSR025P03HZGTL.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | RSR025P03HZGTL | FQA13N80-F109 | IRF6619 | FQPF34N20L |
| Hiersteller | Rohm Semiconductor | onsemi | Infineon Technologies | Fairchild Semiconductor |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 10V | 4.5V, 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 2.5A, 10V | 750mOhm @ 6.3A, 10V | 2.2mOhm @ 30A, 10V | 75mOhm @ 8.75A, 10V |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | Automotive, AEC-Q101 | QFET® | HEXFET® | QFET® |
| Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | 12.6A (Tc) | 30A (Ta), 150A (Tc) | 17.5A (Tc) |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
| Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 10 V | 3500 pF @ 25 V | 5040 pF @ 10 V | 3900 pF @ 25 V |
| Package / Case | SC-96 | TO-3P-3, SC-65-3 | DirectFET™ Isometric MX | TO-220-3 Full Pack |
| FET Feature | - | - | - | - |
| Supplier Device Package | TSMT3 | TO-3PN | DIRECTFET™ MX | TO-220F-3 |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 5V @ 250µA | 2.45V @ 250µA | 2V @ 250µA |
| Basis Produktnummer | RSR025 | FQA13 | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 5 V | 88 nC @ 10 V | 57 nC @ 4.5 V | 72 nC @ 5 V |
| Entworf fir Source Voltage (Vdss) | 30 V | 800 V | 20 V | 200 V |
| Power Dissipation (Max) | 700mW (Ta) | 300W (Tc) | 2.8W (Ta), 89W (Tc) | 55W (Tc) |
| Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
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IRF3707PBFInfineon TechnologiesMOSFET N-CH 30V 62A TO220ABRSR020N06TLRohm SemiconductorMOSFET N-CH 60V 2A TSMT3IRFS3307ZTRLPBFInfineon TechnologiesMOSFET N-CH 75V 120A D2PAK
AOD444Alpha & Omega Semiconductor Inc.MOSFET N-CH 60V 4A/12A TO252SUP70060E-GE3Vishay SiliconixMOSFET N-CH 100V 131A TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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