FQPF34N20L Tech Spezifikatioune
Fairchild Semiconductor - FQPF34N20L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQPF34N20L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 8.75A, 10V | |
Power Dissipation (Max) | 55W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17.5A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQPF34N20L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQPF34N20L | FQPF34N20 | FQPF3N50C | FQPF3N40 |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Rds On (Max) @ Id, Vgs | 75mOhm @ 8.75A, 10V | 75mOhm @ 8.75A, 10V | 2.5Ohm @ 1.5A, 10V | 3.4Ohm @ 800mA, 10V |
Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
Vgs (th) (Max) @ Id | 2V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Power Dissipation (Max) | 55W (Tc) | 55W (Tc) | 25W (Tc) | 20W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V | 3100 pF @ 25 V | 365 pF @ 25 V | 230 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17.5A (Tc) | 17.5A (Tc) | 3A (Tc) | 1.6A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | QFET® | QFET® | QFET® | QFET® |
Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 5 V | 78 nC @ 10 V | 13 nC @ 10 V | 7.5 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 500 V | 400 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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