IPA65R400CEXKSA1 Tech Spezifikatioune
Infineon Technologies - IPA65R400CEXKSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPA65R400CEXKSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.5V @ 320µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220-FP | |
Serie | CoolMOS™ | |
Rds On (Max) @ Id, Vgs | 400mOhm @ 3.2A, 10V | |
Power Dissipation (Max) | 31W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15.1A (Tc) | |
Basis Produktnummer | IPA65R400 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPA65R400CEXKSA1.
Produktiounsattriff | ||||
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Part Number | IPA65R400CEXKSA1 | IPA65R420CFD | IPA65R650CEXKSA1 | IPA65R600C6 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V | 870 pF @ 100 V | 440 pF @ 100 V | 440 pF @ 100 V |
Serie | CoolMOS™ | CoolMOS™ CFD2 | CoolMOS™ CE | CoolMOS™ |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15.1A (Tc) | 8.7A (Tc) | 7A (Tc) | 7.3A (Tc) |
Basis Produktnummer | IPA65R400 | - | IPA65R650 | - |
Vgs (th) (Max) @ Id | 3.5V @ 320µA | 4.5V @ 300µA | 3.5V @ 210µA | 3.5V @ 210µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 31W (Tc) | 31.2W (Tc) | 28W (Tc) | 28W (Tc) |
Rds On (Max) @ Id, Vgs | 400mOhm @ 3.2A, 10V | 420mOhm @ 3.4A, 10V | 650mOhm @ 2.1A, 10V | 600mOhm @ 2.1A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | 31.5 nC @ 10 V | 23 nC @ 10 V | 23 nC @ 10 V |
Package protegéieren | Tube | Bulk | Tube | Bulk |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 650 V | 650 V |
Supplier Device Package | PG-TO220-FP | PG-TO220-3-111 | PG-TO220-3-FP | PG-TO220-3-111 |
Eroflueden IPA65R400CEXKSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPA65R400CEXKSA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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