RSR020N06TL Tech Spezifikatioune
Rohm Semiconductor - RSR020N06TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSR020N06TL
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TSMT3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 170mOhm @ 2A, 10V | |
Power Dissipation (Max) | 540mW (Ta) | |
Package / Case | SC-96 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | |
Basis Produktnummer | RSR020 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSR020N06TL.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RSR020N06TL | SIA436DJ-T1-GE3 | SIHP180N60E-GE3 | FDR836P |
Hiersteller | Rohm Semiconductor | Vishay Siliconix | Vishay Siliconix | Fairchild Semiconductor |
Serie | - | TrenchFET® | E | PowerTrench® |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Bulk |
Vgs (Max) | ±20V | ±5V | ±30V | ±8V |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 540mW (Ta) | 3.5W (Ta), 19W (Tc) | 156W (Tc) | 900mW (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 1.2V, 4.5V | 10V | 2.5V, 4.5V |
Supplier Device Package | TSMT3 | PowerPAK® SC-70-6 | TO-220AB | SuperSOT™-8 |
Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V | 1508 pF @ 4 V | 1085 pF @ 100 V | 2200 pF @ 25 V |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 170mOhm @ 2A, 10V | 9.4mOhm @ 15.7A, 4.5V | 180mOhm @ 9.5A, 10V | 30mOhm @ 6.1A, 4.5V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | 800mV @ 250µA | 5V @ 250µA | 1V @ 250µA |
Package / Case | SC-96 | PowerPAK® SC-70-6 | TO-220-3 | 8-LSOP (0.130", 3.30mm Width) |
Entworf fir Source Voltage (Vdss) | 60 V | 8 V | 600 V | 20 V |
FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 10 V | 25.2 nC @ 5 V | 33 nC @ 10 V | 44 nC @ 4.5 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | 12A (Tc) | 19A (Tc) | 6.1A (Ta) |
Basis Produktnummer | RSR020 | SIA436 | SIHP180 | - |
Eroflueden RSR020N06TL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RSR020N06TL - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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