SIA436DJ-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIA436DJ-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIA436DJ-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 800mV @ 250µA | |
| Vgs (Max) | ±5V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® SC-70-6 | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 15.7A, 4.5V | |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | |
| Package / Case | PowerPAK® SC-70-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1508 pF @ 4 V | |
| Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 8 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
| Basis Produktnummer | SIA436 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIA436DJ-T1-GE3.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | SIA436DJ-T1-GE3 | SIA440DJ-T1-GE3 | SIA439EDJ-T1-GE3 | SIA444DJT-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Supplier Device Package | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Entworf fir Source Voltage (Vdss) | 8 V | 40 V | 20 V | 30 V |
| Package / Case | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
| Basis Produktnummer | SIA436 | SIA440 | SIA439 | SIA444 |
| Input Capacitance (Ciss) (Max) @ Vds | 1508 pF @ 4 V | 700 pF @ 20 V | 2410 pF @ 10 V | 560 pF @ 15 V |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | 2.5V, 10V | 1.8V, 4.5V | 4.5V, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±5V | ±12V | ±8V | ±20V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 12A (Tc) | 28A (Tc) | 12A (Tc) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 5 V | 21.5 nC @ 10 V | 69 nC @ 8 V | 15 nC @ 10 V |
| Vgs (th) (Max) @ Id | 800mV @ 250µA | 1.4V @ 250µA | 1V @ 250µA | 2.2V @ 250µA |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | 3.5W (Ta), 19W (Tc) | 3.5W (Ta), 19W (Tc) | 3.5W (Ta), 19W (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 15.7A, 4.5V | 26mOhm @ 9A, 10V | 16.5mOhm @ 5A, 4.5V | 17mOhm @ 7.4A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden SIA436DJ-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIA436DJ-T1-GE3 - Vishay Siliconix.
SIA440DJ-T1-GE3Vishay SiliconixMOSFET N-CH 40V 12A PPAK SC70-6SiA436DJ-T1-GE3 MOSCCSEMI
SIA432DJ-D1-GE3Electro-Films (EFI) / VishaySIA432DJ-T4-GE3Electro-Films (EFI) / VishaySIA439EDJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 28A PPAK SC70-6SIA444DJT-T1-GE3Vishay SiliconixMOSFET N-CH 30V 12A PPAK SC70-6SIA433EDJElectro-Films (EFI) / VishaySIA432DJ-T1-GE3Vishay SiliconixMOSFET N-CH 30V 12A PPAK SC70-6SIA433EDJ-T1-GE3 MOSElectro-Films (EFI) / VishaySIA433EDJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 12A PPAK SC70-6SIA441DJ-T1-GE3Vishay SiliconixMOSFET P-CH 40V 12A PPAK SC70-6SIA443DJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 9A PPAK SC70-6SIA445EDJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 12A PPAK SC70-6SIA437DJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 29.7A PPAK SC70SIA431DJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 12A PPAK SC70-6SIA432DJ-TI-GE3Electro-Films (EFI) / VishaySiA444DJT-T1-GE3 MOSCCSEMISIA431DJ-T1-GE3 MOSElectro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.