IXFN50N80Q2 Tech Spezifikatioune
IXYS - IXFN50N80Q2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFN50N80Q2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5.5V @ 8mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-227B | |
Serie | HiPerFET™, Q2 Class | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 1135W (Tc) | |
Package / Case | SOT-227-4, miniBLOC | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | IXFN50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFN50N80Q2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFN50N80Q2 | IXFN52N90P | IXFN55N50 | IXFN50N120SIC |
Hiersteller | IXYS | IXYS Corporation | IXYS | IXYS |
Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 25 V | 19000pF @ 25V | 9400 pF @ 25 V | 1900 pF @ 1000 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | 308nC @ 10V | 330 nC @ 10 V | 100 nC @ 20 V |
Entworf fir Source Voltage (Vdss) | 800 V | 900V | 500 V | 1200 V |
Basis Produktnummer | IXFN50 | - | IXFN55 | IXFN50 |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 5.5V @ 8mA | 6.5V @ 1mA | 4.5V @ 8mA | 2.2V @ 2mA |
Package protegéieren | Tube | - | Tube | Tube |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 43A (Tc) | 55A (Tc) | 47A (Tc) |
Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V | 160 mOhm @ 26A, 10V | 90mOhm @ 27.5A, 10V | 50mOhm @ 40A, 20V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 20V |
Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Power Dissipation (Max) | 1135W (Tc) | 890W (Tc) | 625W (Tc) | - |
Vgs (Max) | ±30V | ±30V | ±20V | +20V, -5V |
Serie | HiPerFET™, Q2 Class | Polar™ | HiPerFET™ | - |
Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
Supplier Device Package | SOT-227B | SOT-227B | SOT-227B | SOT-227B |
Eroflueden IXFN50N80Q2 PDF DataDhusts an IXYS Dokumentatioun fir IXFN50N80Q2 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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