IXTQ130N10T Tech Spezifikatioune
IXYS - IXTQ130N10T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTQ130N10T
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | Trench | |
Rds On (Max) @ Id, Vgs | 9.1mOhm @ 25A, 10V | |
Power Dissipation (Max) | 360W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5080 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) | |
Basis Produktnummer | IXTQ130 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTQ130N10T.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTQ130N10T | IXTQ180N055T | IXTQ140N10P | IXTP90N055T |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Rds On (Max) @ Id, Vgs | 9.1mOhm @ 25A, 10V | 4mOhm @ 50A, 10V | 11mOhm @ 70A, 10V | 8.8mOhm @ 25A, 10V |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-220-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) | 180A (Tc) | 140A (Tc) | 90A (Tc) |
Vgs (Max) | ±20V | - | ±20V | ±20V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4V @ 1mA | 5V @ 250µA | 4V @ 50µA |
Input Capacitance (Ciss) (Max) @ Vds | 5080 pF @ 25 V | 5800 pF @ 25 V | 4700 pF @ 25 V | 2500 pF @ 25 V |
Supplier Device Package | TO-3P | TO-3P | TO-3P | TO-220-3 |
Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V | 160 nC @ 10 V | 155 nC @ 10 V | 61 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Power Dissipation (Max) | 360W (Tc) | - | 600W (Tc) | 176W (Tc) |
FET Feature | - | - | - | - |
Basis Produktnummer | IXTQ130 | - | IXTQ140 | IXTP90 |
Package protegéieren | Tube | Tube | Tube | Tube |
Entworf fir Source Voltage (Vdss) | 100 V | 55 V | 100 V | 55 V |
Serie | Trench | - | Polar | TrenchT2™ |
Eroflueden IXTQ130N10T PDF DataDhusts an IXYS Dokumentatioun fir IXTQ130N10T - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.