IXTP8N50P Tech Spezifikatioune
IXYS - IXTP8N50P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTP8N50P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5.5V @ 100µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | PolarHV™ | |
Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V | |
Power Dissipation (Max) | 150W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
Basis Produktnummer | IXTP8 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTP8N50P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTP8N50P | IXTQ120N20P | IXTQ100N25P | IXTQ110N10P |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Package protegéieren | Tube | Tube | Tube | Tube |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 120A (Tc) | 100A (Tc) | 110A (Tc) |
Supplier Device Package | TO-220-3 | TO-3P | TO-3P | TO-3P |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 152 nC @ 10 V | 185 nC @ 10 V | 110 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V | 6000 pF @ 25 V | 6300 pF @ 25 V | 3550 pF @ 25 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 150W (Tc) | 714W (Tc) | 600W (Tc) | 480W (Tc) |
Entworf fir Source Voltage (Vdss) | 500 V | 200 V | 250 V | 100 V |
Vgs (th) (Max) @ Id | 5.5V @ 100µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Serie | PolarHV™ | Polar | Polar | Polar |
Package / Case | TO-220-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V | 22mOhm @ 500mA, 10V | 24mOhm @ 50A, 10V | 15mOhm @ 500mA, 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | IXTP8 | IXTQ120 | IXTQ100 | IXTQ110 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden IXTP8N50P PDF DataDhusts an IXYS Dokumentatioun fir IXTP8N50P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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