IXTQ110N055P Tech Spezifikatioune
IXYS - IXTQ110N055P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTQ110N055P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | Polar | |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 390W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 110A (Tc) | |
Basis Produktnummer | IXTQ110 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTQ110N055P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTQ110N055P | IXTP88N085T | IXTQ140N10P | IXTP90N055T |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 110A (Tc) | 88A (Tc) | 140A (Tc) | 90A (Tc) |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V | 3140 pF @ 25 V | 4700 pF @ 25 V | 2500 pF @ 25 V |
Basis Produktnummer | IXTQ110 | IXTP88 | IXTQ140 | IXTP90 |
Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V | 69 nC @ 10 V | 155 nC @ 10 V | 61 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 55 V | 85 V | 100 V | 55 V |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 500mA, 10V | 11mOhm @ 25A, 10V | 11mOhm @ 70A, 10V | 8.8mOhm @ 25A, 10V |
Power Dissipation (Max) | 390W (Tc) | 230W (Tc) | 600W (Tc) | 176W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 5.5V @ 250µA | 4V @ 100µA | 5V @ 250µA | 4V @ 50µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | Polar | TrenchMV™ | Polar | TrenchT2™ |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-3P-3, SC-65-3 | TO-220-3 | TO-3P-3, SC-65-3 | TO-220-3 |
Supplier Device Package | TO-3P | TO-220-3 | TO-3P | TO-220-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden IXTQ110N055P PDF DataDhusts an IXYS Dokumentatioun fir IXTQ110N055P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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