IXTQ16N50P Tech Spezifikatioune
IXYS - IXTQ16N50P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTQ16N50P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | Polar | |
Rds On (Max) @ Id, Vgs | 400mOhm @ 8A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | |
Basis Produktnummer | IXTQ16 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTQ16N50P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTQ16N50P | IXTQ18N60P | IXTQ200N10T | IXTQ22N50P |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Power Dissipation (Max) | 300W (Tc) | 360W (Tc) | 550W (Tc) | 350W (Tc) |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Rds On (Max) @ Id, Vgs | 400mOhm @ 8A, 10V | 420mOhm @ 9A, 10V | 5.5mOhm @ 50A, 10V | 270mOhm @ 11A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | Polar | Polar | Trench | Polar |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | 18A (Tc) | 200A (Tc) | 22A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 500 V | 600 V | 100 V | 500 V |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 25 V | 2500 pF @ 25 V | 9400 pF @ 25 V | 2630 pF @ 25 V |
Vgs (th) (Max) @ Id | 5.5V @ 250µA | 5.5V @ 250µA | 4.5V @ 250µA | 5.5V @ 250µA |
Basis Produktnummer | IXTQ16 | IXTQ18 | IXTQ200 | IXTQ22 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | 49 nC @ 10 V | 152 nC @ 10 V | 50 nC @ 10 V |
Supplier Device Package | TO-3P | TO-3P | TO-3P | TO-3P |
Eroflueden IXTQ16N50P PDF DataDhusts an IXYS Dokumentatioun fir IXTQ16N50P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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