FDP5500-F085 Tech Spezifikatioune
Fairchild Semiconductor - FDP5500-F085 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDP5500-F085
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | Automotive, AEC-Q101, UltraFET™ | |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 375W (Tc) | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3565 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 269 nC @ 20 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDP5500-F085.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | FDP5500-F085 | FDP5645 | FDP46N30 | FDP5680 |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Entworf fir Source Voltage (Vdss) | 55 V | 60 V | - | 60 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | - | -65°C ~ 175°C (TJ) |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 269 nC @ 20 V | 107 nC @ 10 V | - | 46 nC @ 10 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | - | 4V @ 250µA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| Serie | Automotive, AEC-Q101, UltraFET™ | PowerTrench® | * | PowerTrench® |
| FET Typ | N-Channel | N-Channel | - | N-Channel |
| Vgs (Max) | ±20V | ±20V | - | ±20V |
| Package / Case | TO-220-3 | TO-220-3 | - | TO-220-3 |
| Input Capacitance (Ciss) (Max) @ Vds | 3565 pF @ 25 V | 4468 pF @ 30 V | - | 1850 pF @ 25 V |
| Power Dissipation (Max) | 375W (Tc) | 125W (Tc) | - | 65W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 80A (Ta) | - | 40A (Tc) |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Supplier Device Package | TO-220-3 | TO-220-3 | - | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 80A, 10V | 9.5mOhm @ 40A, 10V | - | 20mOhm @ 20A, 10V |
| Package protegéieren | Bulk | Tube | Bulk | Tube |
FDP5645onsemiMOSFET N-CH 60V 80A TO220-3FDP5500_F085Fairchild (onsemi)FDP42NA15Fairchild (onsemi)FDP46N30Fairchild Semiconductor46A, 300V, 0.079OHM, N-CHANNEL MFDP50N06FSCFDP5680Fairchild SemiconductorMOSFET N-CH 60V 40A TO220-3FDP51N25 MOSFairchild (onsemi)FDP5645 MOSFairchild (onsemi)
FDP4D5N10ConsemiMOSFET N-CH 100V 128A TO220-3FDP42AN15AOFSCFDP51N25onsemiMOSFET N-CH 250V 51A TO220-3FDP5645Fairchild SemiconductorMOSFET N-CH 60V 80A TO220-3FDP5500-F085onsemiMOSFET N-CH 55V 80A TO220-3FDP52N20onsemiMOSFET N-CH 200V 52A TO220-3FDP55N06Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 5FDP55N06 MOSFairchild (onsemi)FDP55N06onsemiMOSFET N-CH 60V 55A TO220-3FDP5680onsemiMOSFET N-CH 60V 40A TO220-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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