FDP55N06 Tech Spezifikatioune
onsemi - FDP55N06 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDP55N06
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | UniFET™ | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 27.5A, 10V | |
Power Dissipation (Max) | 114W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) | |
Basis Produktnummer | FDP55 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | Not Applicable |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDP55N06.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDP55N06 | FDP5500-F085 | FDP5690 | FDP4D5N10C |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Entworf fir Source Voltage (Vdss) | 60 V | 55 V | 60 V | 100 V |
Vgs (Max) | ±25V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Serie | UniFET™ | Automotive, AEC-Q101, UltraFET™ | PowerTrench® | PowerTrench® |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 22mOhm @ 27.5A, 10V | 7mOhm @ 80A, 10V | 27mOhm @ 16A, 10V | 4.5mOhm @ 100A, 10V |
Power Dissipation (Max) | 114W (Tc) | 375W (Tc) | 58W (Tc) | 2.4W (Ta), 150W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Basis Produktnummer | FDP55 | - | - | FDP4D5 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 310µA |
Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V | 3565 pF @ 25 V | 1120 pF @ 25 V | 5065 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 269 nC @ 20 V | 33 nC @ 10 V | 68 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) | 80A (Tc) | 32A (Tc) | 128A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 6V, 10V | 10V |
Package protegéieren | Tube | Bulk | Tube | Tube |
Eroflueden FDP55N06 PDF DataDhusts an onsemi Dokumentatioun fir FDP55N06 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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