FDP5500-F085 Tech Spezifikatioune
onsemi - FDP5500-F085 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDP5500-F085
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | Automotive, AEC-Q101, UltraFET™ | |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 375W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3565 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 269 nC @ 20 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
| Basis Produktnummer | FDP55 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDP5500-F085.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDP5500-F085 | FDP51N25 | FDP52N20 | FDP55N06 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Basis Produktnummer | FDP55 | FDP51 | FDP52 | FDP55 |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3565 pF @ 25 V | 3410 pF @ 25 V | 2900 pF @ 25 V | 1510 pF @ 25 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±20V | ±30V | ±30V | ±25V |
| Gate Charge (Qg) (Max) @ Vgs | 269 nC @ 20 V | 70 nC @ 10 V | 63 nC @ 10 V | 37 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 80A, 10V | 60mOhm @ 25.5A, 10V | 49mOhm @ 26A, 10V | 22mOhm @ 27.5A, 10V |
| Power Dissipation (Max) | 375W (Tc) | 320W (Tc) | 357W (Tc) | 114W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 51A (Tc) | 52A (Tc) | 55A (Tc) |
| Package protegéieren | Tube | Tube | Tube | Tube |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
| Serie | Automotive, AEC-Q101, UltraFET™ | UniFET™ | UniFET™ | UniFET™ |
| Entworf fir Source Voltage (Vdss) | 55 V | 250 V | 200 V | 60 V |
Eroflueden FDP5500-F085 PDF DataDhusts an onsemi Dokumentatioun fir FDP5500-F085 - onsemi.
FDP51N25onsemiMOSFET N-CH 250V 51A TO220-3FDP52N20onsemiMOSFET N-CH 200V 52A TO220-3
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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