FDP5680 Tech Spezifikatioune
onsemi - FDP5680 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDP5680
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 65W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | |
| Basis Produktnummer | FDP56 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDP5680.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FDP5680 | FDP5690 | FDP5500-F085 | FDP5690 |
| Hiersteller | onsemi | Fairchild Semiconductor | onsemi | onsemi |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V | 1120 pF @ 25 V | 3565 pF @ 25 V | 1120 pF @ 25 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 10V | 6V, 10V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 20A, 10V | 27mOhm @ 16A, 10V | 7mOhm @ 80A, 10V | 27mOhm @ 16A, 10V |
| Serie | PowerTrench® | PowerTrench® | Automotive, AEC-Q101, UltraFET™ | PowerTrench® |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | 32A (Tc) | 80A (Tc) | 32A (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | FDP56 | - | FDP55 | FDP56 |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V | 33 nC @ 10 V | 269 nC @ 20 V | 33 nC @ 10 V |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 65W (Tc) | 58W (Tc) | 375W (Tc) | 58W (Tc) |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 55 V | 60 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Eroflueden FDP5680 PDF DataDhusts an onsemi Dokumentatioun fir FDP5680 - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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