IRLML2803GTRPBF Tech Spezifikatioune
Infineon Technologies - IRLML2803GTRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML2803GTRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Voltage - Test | 85pF @ 25V | |
Voltage - Breakdown | Micro3™/SOT-23 | |
Vgs (th) (Max) @ Id | 250 mOhm @ 910mA, 10V | |
Vgs (Max) | 4.5V, 10V | |
Technologie | MOSFET (Metal Oxide) | |
Serie | HEXFET® | |
RoHS Status | Cut Tape (CT) | |
Rds On (Max) @ Id, Vgs | 1.2A (Ta) | |
Polarisatioun | TO-236-3, SC-59, SOT-23-3 | |
Aner Names | IRLML2803GTRPBFCT | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) | |
Fabrik Standard Lead Time | 10 Weeks | |
Hiersteller | IRLML2803GTRPBF | |
Input Capacitance (Ciss) (Max) @ Vds | 5nC @ 10V | |
IGBT Type | ±20V | |
Gate Charge (Qg) (Max) @ Vgs | 1V @ 250µA | |
FET Feature | N-Channel | |
Expanded Description | N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 | |
Entworf fir Source Voltage (Vdss) | - | |
Beschreiwung | MOSFET N-CH 30V 1.2A SOT-23-3 | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30V | |
Capacitance Ratio | 540mW (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLML2803GTRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLML2803GTRPBF | IRLML2803TRPBF | IRLML2803TR | IRLML2803TRPBF-1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Feature | N-Channel | - | - | - |
Fabrik Standard Lead Time | 10 Weeks | - | - | - |
Voltage - Breakdown | Micro3™/SOT-23 | - | - | - |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Aner Names | IRLML2803GTRPBFCT | - | - | - |
Expanded Description | N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 | - | - | - |
Hiersteller | IRLML2803GTRPBF | - | - | - |
Capacitance Ratio | 540mW (Ta) | - | - | - |
Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) | - | - | - |
Rds On (Max) @ Id, Vgs | 1.2A (Ta) | 250mOhm @ 910mA, 10V | 250mOhm @ 910mA, 10V | 250mOhm @ 910mA, 10V |
RoHS Status | Cut Tape (CT) | - | - | - |
Entworf fir Source Voltage (Vdss) | - | 30 V | 30 V | 30 V |
IGBT Type | ±20V | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 1V @ 250µA | 5 nC @ 10 V | 5 nC @ 10 V | 5 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 250 mOhm @ 910mA, 10V | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Voltage - Test | 85pF @ 25V | - | - | - |
Beschreiwung | MOSFET N-CH 30V 1.2A SOT-23-3 | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 5nC @ 10V | 85 pF @ 25 V | 85 pF @ 25 V | 85 pF @ 25 V |
Polarisatioun | TO-236-3, SC-59, SOT-23-3 | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30V | 1.2A (Ta) | 1.2A (Ta) | 1.2A (Ta) |
Vgs (Max) | 4.5V, 10V | ±20V | - | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden IRLML2803GTRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML2803GTRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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