IRLML2502TR Tech Spezifikatioune
Infineon Technologies - IRLML2502TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML2502TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro3™/SOT-23 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.2A, 4.5V | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Cut Tape (CT) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.2A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLML2502TR.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | IRLML2502TR | IRLML2402TRPBF | IRLML2502GTRPBF | IRLML2803TR |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.2A (Ta) | 1.2A (Ta) | 4.2A (Ta) | 1.2A (Ta) |
| Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) | Cut Tape (CT) |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 30 V |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 15 V | 110 pF @ 15 V | 740 pF @ 15 V | 85 pF @ 25 V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.2A, 4.5V | 250mOhm @ 930mA, 4.5V | 45mOhm @ 4.2A, 4.5V | 250mOhm @ 910mA, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | - | HEXFET® | HEXFET® | - |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V | 3.9 nC @ 4.5 V | 12 nC @ 5 V | 5 nC @ 10 V |
| Supplier Device Package | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | 700mV @ 250µA (Min) | 1.2V @ 250µA | 1V @ 250µA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden IRLML2502TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML2502TR - Infineon Technologies.
IRLML2502TRPAMI Semiconductor/onsemi
IRLML2502TRPBF-1IRIRLML2502GPBFIRIRLML2502TRPBIRIRLML2402TRPBF-1IRIRLML2402TRPBF.IRIRLML2803SIPUSEMIIRLML2403TRIRIRLML2803GPBFIRIRLML2402TRPBFInfineon TechnologiesMOSFET N-CH 20V 1.2A SOT23IRLML2502GTRPBFInfineon TechnologiesMOSFET N-CH 20V 4.2A SOT23IRLML2803TRInfineon TechnologiesMOSFET N-CH 30V 1.2A SOT-23
IRLML2803GTRPBFInfineon TechnologiesMOSFET N-CH 30V 1.2A SOT-23-3
IRLML2803PBFCypress Semiconductor (Infineon Technologies)IRLML2402TRInfineon TechnologiesMOSFET N-CH 20V 1.2A SOT-23IRLML2502PBFIRIRLML2502TRPBFInfineon TechnologiesMOSFET N-CH 20V 4.2A SOT23IRLML2502SIPUSEMI| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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