IRLML2803TRPBF-1 Tech Spezifikatioune
Infineon Technologies - IRLML2803TRPBF-1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML2803TRPBF-1
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | Micro3™/SOT-23 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 250mOhm @ 910mA, 10V | |
Power Dissipation (Max) | 540mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLML2803TRPBF-1.
Produktiounsattriff | ||||
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Part Number | IRLML2803TRPBF-1 | IRLML5103GTRPBF | IRLML2803TRPBF | IRLML2803TR |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Ta) | 30V | 1.2A (Ta) | 1.2A (Ta) |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V | 1V @ 250µA | 5 nC @ 10 V | 5 nC @ 10 V |
Supplier Device Package | Micro3™/SOT-23 | - | Micro3™/SOT-23 | Micro3™/SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 | - | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Vgs (th) (Max) @ Id | 1V @ 250µA | 600 mOhm @ 600mA, 10V | 1V @ 250µA | 1V @ 250µA |
Serie | HEXFET® | HEXFET® | HEXFET® | - |
Vgs (Max) | ±20V | 4.5V, 10V | ±20V | - |
Entworf fir Source Voltage (Vdss) | 30 V | - | 30 V | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V | 5.1nC @ 10V | 85 pF @ 25 V | 85 pF @ 25 V |
FET Typ | N-Channel | - | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 540mW (Ta) | - | 540mW (Ta) | - |
Rds On (Max) @ Id, Vgs | 250mOhm @ 910mA, 10V | 760mA (Ta) | 250mOhm @ 910mA, 10V | 250mOhm @ 910mA, 10V |
FET Feature | - | P-Channel | - | - |
Package protegéieren | Tape & Reel (TR) | - | Tape & Reel (TR) | Cut Tape (CT) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Eroflueden IRLML2803TRPBF-1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML2803TRPBF-1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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