IRLML2803TRPBF Tech Spezifikatioune
Infineon Technologies - IRLML2803TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML2803TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro3™/SOT-23 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 910mA, 10V | |
| Power Dissipation (Max) | 540mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Ta) | |
| Basis Produktnummer | IRLML2803 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLML2803TRPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRLML2803TRPBF | IRLML5103TR | IRLML2803TRPBF-1 | IRLML5103TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V | 75 pF @ 25 V | 85 pF @ 25 V | 75 pF @ 25 V |
| Basis Produktnummer | IRLML2803 | - | - | IRLML5103 |
| FET Feature | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Ta) | 760mA (Ta) | 1.2A (Ta) | 760mA (Ta) |
| Power Dissipation (Max) | 540mW (Ta) | - | 540mW (Ta) | 540mW (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | - | 4.5V, 10V |
| Serie | HEXFET® | - | HEXFET® | HEXFET® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 910mA, 10V | 600mOhm @ 600mA, 10V | 250mOhm @ 910mA, 10V | 600mOhm @ 600mA, 10V |
| FET Typ | N-Channel | P-Channel | N-Channel | P-Channel |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
| Supplier Device Package | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±20V | - | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V | 5.1 nC @ 10 V | 5 nC @ 10 V | 5.1 nC @ 10 V |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Eroflueden IRLML2803TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML2803TRPBF - Infineon Technologies.
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IRLML5103GTRPBFInfineon TechnologiesMOSFET P-CH 30V 0.76A SOT-23-3IRLML2502TRPBF-1IR
IRLML2502TRPAMI Semiconductor/onsemiIRLML2803GTRPBFInfineon TechnologiesMOSFET N-CH 30V 1.2A SOT-23-3IRLML2502TRPBFInfineon TechnologiesMOSFET N-CH 20V 4.2A SOT23IRLML5103SIPUSEMIIRLML2803SIPUSEMI| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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