IRF5806TRPBF Tech Spezifikatioune
Infineon Technologies - IRF5806TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5806TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro6™(TSOP-6) | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 4A, 4.5V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 594 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5806TRPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF5806TRPBF | IRF5803TRPBF | IRF5803TR | IRF5804TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | 3.4A (Ta) | 3.4A (Ta) | 2.5A (Ta) |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 20 V | 40 V | 40 V | 40 V |
| Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | 2W (Ta) | 2W (Ta) |
| Supplier Device Package | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 4.5 V | 37 nC @ 10 V | 37 nC @ 10 V | 8.5 nC @ 10 V |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Input Capacitance (Ciss) (Max) @ Vds | 594 pF @ 15 V | 1110 pF @ 25 V | 1110 pF @ 25 V | 680 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 4A, 4.5V | 112mOhm @ 3.4A, 10V | 112mOhm @ 3.4A, 10V | 198mOhm @ 2.5A, 10V |
Eroflueden IRF5806TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5806TRPBF - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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