Produkt Lëscht
| Verglach | Bild | Du props # | Hiersteller | Beschreiwung | Inventaire | Ecadmodell | RoHS | FET Feature | Entworf fir Source Voltage (Vdss) | Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Test | Fuert Volt (Max Rds On, Min Rds On) | Vgs (Max) | FET Typ | Aner Names | Basis Produktnummer | Package protegéieren | Serie | Hiersteller | Beschreiwung | Feuchtigkeit Sensibilitéitniveau (MSL) | Fabrik Standard Lead Time | Expanded Description | RoHS Status | Technologie | Operatioun Temperatur | Mounting Type | Package / Case | Polarisatioun | Supplier Device Package | Voltage - Breakdown | Power Dissipation (Max) | Capacitance Ratio | Quantitéit |
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IXFH7N100P | IXYS | MOSFET N-CH 1000V 7A TO247 | Op Lager5821 pcs | - | 1000 V | 7A (Tc) | 1.9Ohm @ 3.5A, 10V | 6V @ 1mA | 47 nC @ 10 V | 2590 pF @ 25 V | - | 10V | ±30V | N-Channel | - | IXFH7 | Tube | HiPerFET™, Polar | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247 (IXTH) | - | 300W (Tc) | - | ||||
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FDS6680AS | Fairchild Semiconductor | SMALL SIGNAL FIELD-EFFECT TRANSI | Op Lager5130 pcs | - | 30 V | 11.5A (Ta) | 10mOhm @ 11.5A, 10V | 3V @ 1mA | 30 nC @ 10 V | 1240 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Bulk | PowerTrench®, SyncFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 2.5W (Ta) | - | ||||
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SPW07N60CFD | Infineon Technologies | N-CHANNEL POWER MOSFET | Op Lager35610 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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FDMC86340ET80 | onsemi | MOSFET N-CH 80V 14A/68A POWER33 | Op Lager18691 pcs | - | 80 V | 14A (Ta), 68A (Tc) | 6.5mOhm @ 14A, 10V | 4V @ 250µA | 49 nC @ 10 V | 2775 pF @ 40 V | - | 8V, 10V | ±20V | N-Channel | - | FDMC86340 | Tape & Reel (TR) | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | - | Power33 | - | 2.8W (Ta), 65W (Tc) | - | ||||
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TSM2NB60CH | Taiwan Semiconductor Corporation | 600V, 2A, SINGLE N-CHANNEL POWER | Op Lager51850 pcs | - | 600 V | 2A (Tc) | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 9.4 nC @ 10 V | 249 pF @ 25 V | - | 10V | ±30V | N-Channel | - | TSM2 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | TO-251 (IPAK) | - | 44W (Tc) | - | ||||
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DMN3032LE-13 | Diodes Incorporated | MOSFET N-CH 30V 5.6A SOT223 | Op Lager145660 pcs | - | 30 V | 5.6A (Ta) | 29mOhm @ 3.2A, 10V | 2V @ 250µA | 11.3 nC @ 10 V | 498 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | DMN3032 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | - | SOT-223-3 | - | 1.8W (Ta) | - | ||||
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CSD17318Q2T | Texas Instruments | MOSFET N-CHANNEL 30V 25A 6WSON | Op Lager63650 pcs | - | 30 V | 25A (Tc) | 15.1mOhm @ 8A, 8V | 1.2V @ 250µA | 6 nC @ 4.5 V | 879 pF @ 15 V | - | 2.5V, 8V | ±10V | N-Channel | - | CSD17318 | Tape & Reel (TR) | NexFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | - | 6-WSON (2x2) | - | 16W (Tc) | - | ||||
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APT5010LVRG | Microchip Technology | MOSFET N-CH 500V 47A TO264 | Op Lager2510 pcs | - | 500 V | 47A (Tc) | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | 8900 pF @ 25 V | - | - | - | N-Channel | - | APT5010 | Tube | POWER MOS V® | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | Through Hole | TO-264-3, TO-264AA | - | TO-264 [L] | - | - | - | ||||
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UPA2210T1M-T1-AT | Renesas Electronics America Inc | MOSFET P-CH 20V 7.2A 8VSOF | Op Lager54490 pcs | - | 20 V | 7.2A (Ta) | 29mOhm @ 7.2A, 4.5V | 1.5V @ 1mA | 16.3 nC @ 4.5 V | 1350 pF @ 10 V | - | - | - | P-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | - | 8-VSOF | - | 1.1W (Ta) | - | ||||
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DMP3017SFGQ-13 | Diodes Incorporated | MOSFET P-CH 30V 11.5A PWRDI3333 | Op Lager3830 pcs | - | 30 V | 11.5A (Ta) | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 41 nC @ 10 V | 2246 pF @ 15 V | - | 4.5V, 10V | ±25V | P-Channel | - | DMP3017 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | PowerDI3333-8 | - | 940mW (Ta) | - | ||||
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FCPF11N65 | Fairchild Semiconductor | TRANS MOSFET N-CH 600V 11A 3PIN( | Op Lager24011 pcs | - | 650 V | 11A (Tc) | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | 1490 pF @ 25 V | - | - | - | N-Channel | - | FCPF11 | Bulk | SuperFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | - | TO-220F | - | 36W (Tc) | - | ||||
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IRF530PBF | Vishay Siliconix | MOSFET N-CH 100V 14A TO220AB | Op Lager64540 pcs | - | 100 V | 14A (Tc) | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | 670 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IRF530 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 88W (Tc) | - | ||||
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FDS2572 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 4 | Op Lager5300 pcs | - | 150 V | 4.9A (Tc) | 47mOhm @ 4.9A, 10V | 4V @ 250µA | 38 nC @ 10 V | 2870 pF @ 25 V | - | 10V | ±20V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 2.5W (Ta) | - | ||||
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FDU8796 | onsemi | MOSFET N-CH 25V 35A I-PAK | Op Lager4840 pcs | - | 25 V | 35A (Tc) | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 52 nC @ 10 V | 2610 pF @ 13 V | - | 4.5V, 10V | ±20V | N-Channel | - | FDU87 | Tube | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | 88W (Tc) | - | ||||
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RQ3E180GNTB | Rohm Semiconductor | MOSFET N-CH 30V 18A 8HSMT | Op Lager108290 pcs | - | 30 V | 18A (Ta) | 4.3mOhm @ 18A, 10V | 2.5V @ 1mA | 22.4 nC @ 10 V | 1520 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | RQ3E180 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | 8-HSMT (3.2x3) | - | 2W (Ta) | - | ||||
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IPB60R600CP | Infineon Technologies | N-CHANNEL POWER MOSFET | Op Lager48130 pcs | - | 600 V | 6.1A (Tc) | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27 nC @ 10 V | 550 pF @ 100 V | - | 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | PG-TO263-3-2 | - | 60W (Tc) | - | ||||
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TSM2328CX | Taiwan Semiconductor Corporation | 100V, 1.5A, SINGLE N-CHANNEL POW | Op Lager85370 pcs | - | 100 V | 1.5A (Ta) | 250mOhm @ 1.5A, 10V | 2.5V @ 250µA | 11.1 nC @ 5 V | 975 pF @ 25 V | - | 10V | ±20V | N-Channel | - | TSM2328 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | SOT-23 | - | 1.38W (Ta) | - | ||||
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IRLR3802TRPBF | International Rectifier | IRLR3802 - HEXFET POWER MOSFET | Op Lager5450 pcs | - | 12 V | 84A (Tc) | 8.5mOhm @ 15A, 4.5V | 1.9V @ 250µA | 41 nC @ 5 V | 2490 pF @ 6 V | - | 2.8V, 4.5V | ±12V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | D-Pak | - | 88W (Tc) | - | ||||
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PMG85XP,115 | NXP USA Inc. | NOW NEXPERIA PMG85XP - SMALL SIG | Op Lager865450 pcs | - | 20 V | 2A (Tj) | 115mOhm @ 2A, 4.5V | 1.15V @ 250µA | 7.2 nC @ 4.5 V | 560 pF @ 10 V | - | 2.5V, 4.5V | ±12V | P-Channel | - | PMG85 | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6-TSSOP | - | 375mW (Ta), 2.4W (Tc) | - | ||||
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FDP047N10 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 1 | Op Lager4200 pcs | - | 100 V | 120A (Tc) | 4.7mOhm @ 75A, 10V | 4.5V @ 250µA | 210 nC @ 10 V | 15265 pF @ 25 V | - | 10V | ±20V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 375W (Tc) | - | ||||
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IRF9383MTRPBF | Infineon Technologies | MOSFET P-CH 30V 22A DIRECTFET | Op Lager25493 pcs | - | 30 V | 22A (Ta), 160A (Tc) | 2.9mOhm @ 22A, 10V | 2.4V @ 150µA | 130 nC @ 10 V | 7305 pF @ 15 V | - | 4.5V, 10V | ±20V | P-Channel | - | IRF9383 | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | - | DIRECTFET™ MX | - | 2.1W (Ta), 113W (Tc) | - | ||||
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2N7224U | Microsemi Corporation | MOSFET N-CH 100V 34A TO267AB | Op Lager4740 pcs | - | 100 V | 34A (Tc) | 81mOhm @ 34A, 10V | 4V @ 250µA | 125 nC @ 10 V | - | - | 10V | ±20V | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | - | TO-267AB | - | 4W (Ta), 150W (Tc) | - | ||||
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IRL510L | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO262-3 | Op Lager5080 pcs | - | 100 V | 5.6A (Tc) | 540mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1 nC @ 5 V | 250 pF @ 25 V | - | 4V, 5V | ±10V | N-Channel | - | IRL510 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | TO-262-3 | - | - | - | ||||
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SI7623DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 35A PPAK1212-8 | Op Lager38470 pcs | - | 20 V | 35A (Tc) | 3.8mOhm @ 20A, 10V | 1.5V @ 250µA | 180 nC @ 10 V | 5460 pF @ 10 V | - | 2.5V, 10V | ±12V | P-Channel | - | SI7623 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | - | PowerPAK® 1212-8 | - | 3.7W (Ta), 52W (Tc) | - | ||||
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HAF1002-92L | Renesas Electronics America Inc | P-CHANNEL POWER MOSFET | Op Lager9658 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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NVTFS4C08NTAG | onsemi | MOSFET N-CH 30V 17A 8WDFN | Op Lager42720 pcs | - | 30 V | 17A (Ta) | 5.9mOhm @ 30A, 10V | 2.2V @ 250µA | 18.2 nC @ 10 V | 1113 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | NVTFS4 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | - | 8-WDFN (3.3x3.3) | - | 3.1W (Ta), 31W (Tc) | - | ||||
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IRLHM620TRPBF | Infineon Technologies | MOSFET N-CH 20V 26A/40A PQFN | Op Lager69380 pcs | - | 20 V | 26A (Ta), 40A (Tc) | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78 nC @ 4.5 V | 3620 pF @ 10 V | - | 2.5V, 10V | ±12V | N-Channel | - | IRLHM620 | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | PQFN (3x3) | - | 2.7W (Ta), 37W (Tc) | - | ||||
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ZVN4310GTA | Diodes Incorporated | MOSFET N-CH 100V 1.67A SOT223 | Op Lager45390 pcs | - | 100 V | 1.67A (Ta) | 540mOhm @ 3.3A, 10V | 3V @ 1mA | - | 350 pF @ 25 V | - | 5V, 10V | ±20V | N-Channel | - | ZVN4310 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | - | SOT-223-3 | - | 3W (Ta) | - | ||||
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SI5415AEDU-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 25A PPAK | Op Lager3650 pcs | - | 20 V | 25A (Tc) | 9.6mOhm @ 10A, 4.5V | 1V @ 250µA | 120 nC @ 8 V | 4300 pF @ 10 V | - | 1.8V, 4.5V | ±8V | P-Channel | - | SI5415 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Single | - | PowerPAK® ChipFet Single | - | 3.1W (Ta), 31W (Tc) | - | ||||
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FDS86540 | Fairchild Semiconductor | SMALL SIGNAL FIELD-EFFECT TRANSI | Op Lager17462 pcs | - | 60 V | 18A (Ta) | 4.5mOhm @ 18A, 10V | 4V @ 250µA | 90 nC @ 10 V | 6410 pF @ 30 V | - | 8V, 10V | ±20V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 2.5W (Ta), 5W (Tc) | - | ||||
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SSR2N60BTM | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | Op Lager4100 pcs | - | 600 V | 1.8A (Tc) | 5Ohm @ 900mA, 10V | 4V @ 250µA | 17 nC @ 10 V | 490 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252-3 (DPAK) | - | 2.5W (Ta), 44W (Tc) | - | ||||
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FQU4P25TU | onsemi | MOSFET P-CH 250V 3.1A IPAK | Op Lager5080 pcs | - | 250 V | 3.1A (Tc) | 2.1Ohm @ 1.55A, 10V | 5V @ 250µA | 14 nC @ 10 V | 420 pF @ 25 V | - | 10V | ±30V | P-Channel | - | FQU4 | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | 2.5W (Ta), 45W (Tc) | - | ||||
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APT8075BN | Microsemi Corporation | MOSFET N-CH 800V 13A TO247AD | Op Lager5470 pcs | - | 800 V | 13A (Tc) | 750mOhm @ 6.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | 2950 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Tube | POWER MOS IV® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247AD | - | 310W (Tc) | - | ||||
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SI8413DB-T1-E1 | Vishay Siliconix | MOSFET P-CH 20V 4.8A 4MICROFOOT | Op Lager74180 pcs | - | 20 V | 4.8A (Ta) | 48mOhm @ 1A, 4.5V | 1.4V @ 250µA | 21 nC @ 4.5 V | - | - | 2.5V, 4.5V | ±12V | P-Channel | - | SI8413 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, CSPBGA | - | 4-Microfoot | - | 1.47W (Ta) | - | ||||
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SFR9014TF | Fairchild Semiconductor | MOSFET P-CH 60V 5.3A DPAK | Op Lager239320 pcs | - | 60 V | 5.3A (Tc) | 500mOhm @ 2.7A, 10V | 4V @ 250µA | 11 nC @ 10 V | 350 pF @ 25 V | - | 10V | ±30V | P-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252, (D-Pak) | - | 2.5W (Ta), 24W (Tc) | - | ||||
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IPA80R1K4P7 | Infineon Technologies | POWER FIELD-EFFECT TRANSISTOR | Op Lager4320 pcs | - | 800 V | 4A (Tc) | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10 nC @ 10 V | 250 pF @ 500 V | - | 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | PG-TO220-3-31 Full Pack | - | 24W (Tc) | - | ||||
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FDMC7692 | onsemi | MOSFET N-CH 30V 13.3A/16A 8MLP | Op Lager104590 pcs | - | 30 V | 13.3A (Ta), 16A (Tc) | 8.5mOhm @ 13.3A, 10V | 3V @ 250µA | 29 nC @ 10 V | 1680 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | FDMC76 | Tape & Reel (TR) | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | - | 8-MLP (3.3x3.3) | - | 2.3W (Ta), 29W (Tc) | - | ||||
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2SK302200L | Panasonic Electronic Components | MOSFET N-CH 60V 5A U-G2 | Op Lager3770 pcs | - | 60 V | 5A (Tc) | 130mOhm @ 3A, 10V | 2.5V @ 1mA | - | 220 pF @ 10 V | - | 4V, 10V | ±20V | N-Channel | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | U-G2 | - | 1W (Ta), 10W (Tc) | - | ||||
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NP52N06SLG-E1-AY | Renesas Electronics America | MOSFET N-CH 60V 52A TO252 | Op Lager51010 pcs | N-Channel | - | 60V | 52A (Tc) | 17.5 mOhm @ 26A, 10V | - | 39nC @ 10V | 2100pF @ 10V | - | - | - | NP52N06SLG-E1-AY-ND NP52N06SLG-E1-AYTR |
- | - | - | NP52N06SLG-E1-AY | MOSFET N-CH 60V 52A TO252 | 1 (Unlimited) | 16 Weeks | N-Channel 60V 52A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK) | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (MP-3ZK) | - | 1.2W (Ta), 56W (Tc) | ||||
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IRF7779L2TRPBF | Infineon Technologies | MOSFET N-CH 150V 375A DIRECTFET | Op Lager11603 pcs | - | 150 V | 67A (Tc) | 11mOhm @ 40A, 10V | 5V @ 250µA | 150 nC @ 10 V | 6660 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IRF7779 | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L8 | - | DirectFET™ Isometric L8 | - | 3.3W (Ta), 125W (Tc) | - | ||||
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AOT2606L | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 60V 13A/72A TO220 | Op Lager45760 pcs | - | 60 V | 13A (Ta), 72A (Tc) | 6.5mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | 4050 pF @ 30 V | - | 10V | ±20V | N-Channel | - | AOT2606 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220 | - | 2.1W (Ta), 115W (Tc) | - | ||||
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AOB2918L | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 13A/90A TO263 | Op Lager4880 pcs | - | 100 V | 13A (Ta), 90A (Tc) | 7mOhm @ 20A, 10V | 3.9V @ 250µA | 53 nC @ 10 V | 3430 pF @ 50 V | - | 10V | ±20V | N-Channel | - | AOB2918 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | - | 2.1W (Ta), 267W (Tc) | - | ||||
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DMG4496SSS-13 | Diodes Incorporated | MOSFET N-CH 30V 10A 8SOP | Op Lager351520 pcs | - | 30 V | 10A (Ta) | 21.5mOhm @ 10A, 10V | 2V @ 250µA | 10.2 nC @ 10 V | 493.5 pF @ 15 V | - | 4.5V, 10V | ±25V | N-Channel | - | DMG4496 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SO | - | 1.42W (Ta) | - | ||||
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SIA437DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 29.7A PPAK SC70 | Op Lager151650 pcs | - | 20 V | 29.7A (Tc) | 14.5mOhm @ 8A, 4.5V | 900mV @ 250µA | 90 nC @ 8 V | 2340 pF @ 10 V | - | 1.5V, 4.5V | ±8V | P-Channel | - | SIA437 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | - | PowerPAK® SC-70-6 | - | 3.5W (Ta), 19W (Tc) | - | ||||
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NDB7052L | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | Op Lager35500 pcs | - | 50 V | 75A (Tc) | 7.5mOhm @ 37.5A, 10V | 2V @ 250µA | 130 nC @ 5 V | 4030 pF @ 25 V | - | 5V, 10V | ±16V | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 150W (Tc) | - | ||||
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FQPF4N60 | Fairchild Semiconductor | MOSFET N-CH 600V 2.6A TO220F | Op Lager40140 pcs | - | 600 V | 2.6A (Tc) | 2.2Ohm @ 1.3A, 10V | 5V @ 250µA | 20 nC @ 10 V | 670 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220F-3 | - | 36W (Tc) | - | ||||
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FQPF5N60 | Fairchild Semiconductor | MOSFET N-CH 600V 2.8A TO220F | Op Lager4900 pcs | - | 600 V | 2.8A (Tc) | 2Ohm @ 1.4A, 10V | 5V @ 250µA | 20 nC @ 10 V | 730 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220F-3 | - | 40W (Tc) | - | ||||
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SQJ488EP-T1_GE3 | Vishay Siliconix | MOSFET N-CH 100V 42A PPAK SO-8 | Op Lager62250 pcs | - | 100 V | 42A (Tc) | 21mOhm @ 7.4A, 10V | 2.5V @ 250µA | 27 nC @ 10 V | 979 pF @ 25 V | - | 4.5V, 10V | ±20V | N-Channel | - | SQJ488 | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 83W (Tc) | - | ||||
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IRF6729MTRPBF | Infineon Technologies | MOSFET N-CH 30V 31A DIRECTFET | Op Lager4930 pcs | - | 30 V | 31A (Ta), 190A (Tc) | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 63 nC @ 4.5 V | 6030 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | - | DIRECTFET™ MX | - | 2.8W (Ta), 104W (Tc) | - | ||||
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NDS9435 | Fairchild Semiconductor | P-CHANNEL POWER MOSFET | Op Lager30820 pcs | - | - | 5.3A | - | - | - | - | - | - | - | P-Channel | - | - | Bulk | SI9xxx | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 2W | - |