IRLHM620TRPBF Tech Spezifikatioune
Infineon Technologies - IRLHM620TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLHM620TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1.1V @ 50µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PQFN (3x3) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 4.5V | |
Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3620 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 26A (Ta), 40A (Tc) | |
Basis Produktnummer | IRLHM620 |
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Produktiounsattriff | ||||
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Part Number | IRLHM620TRPBF | IRLHM630TRPBF | IRLH5034TRPBF | IRLH6224TRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 4.5 V | 62 nC @ 4.5 V | 82 nC @ 10 V | 86 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | 2.5V, 10V | 4.5V, 10V | 2.5V, 4.5V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 4.5V | 3.5mOhm @ 20A, 4.5V | 2.4mOhm @ 50A, 10V | 3mOhm @ 20A, 4.5V |
Package / Case | 8-PowerTDFN | 8-VQFN Exposed Pad | 8-PowerVDFN | 8-PowerTDFN |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 40 V | 20 V |
Vgs (th) (Max) @ Id | 1.1V @ 50µA | 1.1V @ 50µA | 2.5V @ 150µA | 1.1V @ 50µA |
Basis Produktnummer | IRLHM620 | IRLHM630 | IRLH5034 | IRLH6224 |
Supplier Device Package | PQFN (3x3) | PQFN (3x3) | 8-PQFN (5x6) | 8-PQFN (5x6) |
Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) | 2.7W (Ta), 37W (Tc) | 3.6W (Ta), 156W (Tc) | 3.6W (Ta), 52W (Tc) |
Vgs (Max) | ±12V | ±12V | ±16V | ±12V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 26A (Ta), 40A (Tc) | 21A (Ta), 40A (Tc) | 29A (Ta), 100A (Tc) | 28A (Ta), 105A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 3620 pF @ 10 V | 3170 pF @ 25 V | 4730 pF @ 25 V | 3710 pF @ 10 V |
Eroflueden IRLHM620TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLHM620TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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