2SK302200L Tech Spezifikatioune
Panasonic Electronic Components - 2SK302200L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Panasonic Electronic Components - 2SK302200L
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Panasonic | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | U-G2 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V | |
| Power Dissipation (Max) | 1W (Ta), 10W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Panasonic Electronic Components 2SK302200L.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | 2SK302200L | 2SK3019TL | 2SK302-GR | 2SK303-2-TB-E |
| Hiersteller | Panasonic Electronic Components | Rohm Semiconductor | TAEC Product (Toshiba Electronic Devices and Stora | AMI Semiconductor/onsemi |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V | 8Ohm @ 10mA, 4V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Serie | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | SC-75, SOT-416 | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 10 V | 13 pF @ 5 V | - | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | - |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 1.5V @ 100µA | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Power Dissipation (Max) | 1W (Ta), 10W (Tc) | 150mW (Ta) | - | - |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 100mA (Ta) | - | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 2.5V, 4V | - | - |
| Supplier Device Package | U-G2 | EMT3 | - | - |
Eroflueden 2SK302200L PDF DataDhusts an Panasonic Electronic Components Dokumentatioun fir 2SK302200L - Panasonic Electronic Components.
2SK302-GRTAEC Product (Toshiba Electronic Devices and Stora2SK3019TLRohm SemiconductorMOSFET N-CH 30V 100MA EMT32SK303-2-TB-EAMI Semiconductor/onsemi
2SK3029Panasonic2SK3019KNCJ2SK3022Panasonic2SK303AMI Semiconductor/onsemi2SK3025 MOSPanasonic2SK3029 MOSPanasonic
2SK3019FTLLAPIS Technology2SK3019GZTLLAPIS Technology2SK3024Panasonic2SK3019TL MOSLAPIS Technology2SK3024 MOSPANASON2SK3019KTIP-TEK2SK3025Panasonic2SK302-YTAEC Product (Toshiba Electronic Devices and Stora2SK303 V3AMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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