SIZF906DT-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIZF906DT-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIZF906DT-T1-GE3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PowerPair® (6x5) | |
Serie | TrenchFET® Gen IV | |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V | |
Power - Max | 38W (Tc), 83W (Tc) | |
Package / Case | 8-PowerWDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TA) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 15V, 8200pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V, 92nC @ 4.5V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
Konfiguratioun | 2 N-Channel (Half Bridge) | |
Basis Produktnummer | SIZF906 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIZF906DT-T1-GE3.
Produktiounsattriff | ||||
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Part Number | SIZF906DT-T1-GE3 | SIZ988DT-T1-GE3 | SIZ998BDT-T1-GE3 | SIZ920DT-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 15V, 8200pF @ 15V | 1000pF @ 15V, 2425pF @ 15V | 790pF @ 15V, 2130pF @ 15V | 1260pF @ 15V |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Konfiguratioun | 2 N-Channel (Half Bridge) | 2 N-Channel (Dual) | 2 N-Channel (Dual), Schottky | 2 N-Channel (Half Bridge) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V | 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V | 7.1mOhm @ 18.9A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | 8-PowerPair® (6x5) | 8-PowerPair® | 8-PowerPair® (6x5) | 8-PowerPair® (6x5) |
Serie | TrenchFET® Gen IV | TrenchFET® | TrenchFET® Gen IV | TrenchFET® |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V, 92nC @ 4.5V | 10.5nC @ 4.5V, 23.1nC @ 4.5V | 18nC @ 10V, 46.7nC @ 10V | 35nC @ 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 40A (Tc), 60A (Tc) | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) | 40A |
Basis Produktnummer | SIZF906 | SIZ988 | SIZ998 | SIZ920 |
Operatioun Temperatur | -55°C ~ 150°C (TA) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.4V @ 250µA, 2.2V @ 250µA | 2.2V @ 250µA | 2.5V @ 250µA |
Package / Case | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN |
Power - Max | 38W (Tc), 83W (Tc) | 20.2W, 40W | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) | 39W, 100W |
Eroflueden SIZF906DT-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIZF906DT-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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