SIZ998DT-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIZ998DT-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIZ998DT-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-PowerPair® (6x5) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V | |
| Power - Max | 20.2W, 32.9W | |
| Package / Case | 8-PowerWDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 15V, 2620pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V, 19.8nC @ 4.5V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc), 60A (Tc) | |
| Konfiguratioun | 2 N-Channel (Dual), Schottky | |
| Basis Produktnummer | SIZ998 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIZ998DT-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIZ998DT-T1-GE3 | SIZ918DT-T1-GE3 | SIZ902DT-T1-GE3 | SIZ916DT-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Basis Produktnummer | SIZ998 | SIZ918 | SIZ902 | SIZ916 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA | 2.4V @ 250µA |
| FET Feature | - | Logic Level Gate | Logic Level Gate | - |
| Supplier Device Package | 8-PowerPair® (6x5) | 8-PowerPair® (6x5) | 8-PowerPair® (6x5) | 8-PowerPair® (6x5) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V | 12mOhm @ 13.8A, 10V | 12mOhm @ 13.8A, 10V | 6.4mOhm @ 19A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 15V, 2620pF @ 15V | 790pF @ 15V | 790pF @ 15V | 1208pF @ 15V |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Konfiguratioun | 2 N-Channel (Dual), Schottky | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) |
| Power - Max | 20.2W, 32.9W | 29W, 100W | 29W, 66W | 22.7W, 100W |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V, 19.8nC @ 4.5V | 21nC @ 10V | 21nC @ 10V | 26nC @ 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc), 60A (Tc) | 16A, 28A | 16A | 16A, 40A |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
Eroflueden SIZ998DT-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIZ998DT-T1-GE3 - Vishay Siliconix.
SIZ916DT-T1-GE3 MOSElectro-Films (EFI) / VishaySIZ918DT-T1-GE3Vishay SiliconixMOSFET 2N-CH 30V 16A POWERPAIRSIZB20SHINDENGENSIZ902DT-T1-GE3Vishay SiliconixMOSFET 2N-CH 30V 16A POWERPAIRSIZF918DT-T1-GE3VishaySIZ916DT-T1-GE3Vishay SiliconixMOSFET 2N-CH 30V 16A POWERPAIR
SIZB60TAEC Product (Toshiba Electronic Devices and StoraSIZ910DT-T1-GE3Vishay SiliconixMOSFET 2N-CH 30V 40A POWERPAIRSIZF906DT-T1-GE3Vishay SiliconixMOSFET 2 N-CH 30V 60A POWERPAIRSIZ920DP-T1-GE3Electro-Films (EFI) / VishaySIZB60-4072SHINDENGESIZ980DT-T1-GE3Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIRSIZ988DT-T1-GE3Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIRSIZ980BDT-T1-GE3VishaySIZ904DT-T1-GE3Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIRSIZ920DT-T1-GE3Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIRSIZ998BDT-T1-GE3Vishay SiliconixDUAL N-CHANNEL 30-V (D-S) MOSFETSIZ914DT-GE3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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