SIZ916DT-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIZ916DT-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIZ916DT-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PowerPair® (6x5) | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 19A, 10V | |
Power - Max | 22.7W, 100W | |
Package / Case | 8-PowerWDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1208pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A, 40A | |
Konfiguratioun | 2 N-Channel (Half Bridge) | |
Basis Produktnummer | SIZ916 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIZ916DT-T1-GE3.
Produktiounsattriff | ||||
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Part Number | SIZ916DT-T1-GE3 | SIZ980DT-T1-GE3 | SIZ920DT-T1-GE3 | SIZ902DT-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | 2.2V @ 250µA | 2.5V @ 250µA | 2.2V @ 250µA |
Supplier Device Package | 8-PowerPair® (6x5) | 8-PowerPair® (6x5) | 8-PowerPair® (6x5) | 8-PowerPair® (6x5) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A, 40A | 20A (Tc), 60A (Tc) | 40A | 16A |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
FET Feature | - | - | - | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 19A, 10V | 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V | 7.1mOhm @ 18.9A, 10V | 12mOhm @ 13.8A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1208pF @ 15V | 930pF @ 15V, 4600pF @ 15V | 1260pF @ 15V | 790pF @ 15V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V | 8.1nC @ 4.5V, 35nC @ 4.5V | 35nC @ 10V | 21nC @ 10V |
Basis Produktnummer | SIZ916 | SIZ980 | SIZ920 | SIZ902 |
Konfiguratioun | 2 N-Channel (Half Bridge) | 2 N-Channel (Dual), Schottky | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) |
Package / Case | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN |
Power - Max | 22.7W, 100W | 20W, 66W | 39W, 100W | 29W, 66W |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Eroflueden SIZ916DT-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIZ916DT-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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